Independent electronic and magnetic doping in (Ga,Mn)As based digital ferromagnetic heterostructures

Johnston-Halperin, Ezekiel; Schuller, J. A.; Gallinat, Chad S.; Kreutz, T. C.; Myers, Roberto C.; Kawakami, Roland; Knotz, H.; Gossard, A. C.; Awschalom, D. D.

doi:10.1103/physrevb.68.165328

Cited by 32 publications

(25 citation statements)

References 24 publications

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“…11,12 We investigated the Curie temperature, and the magnetic anisotropy of samples from low 10 19 cm −3 hole densities up to the highly metallic regime ͑low 10 21 cm −3 ͒, at fixed manganese concentration. Similar studies have already been reported, where authors used codoping, 13,14 atomic-layer epitaxy, 15 post-growth annealing, 16 or modulation-doped heterostructures 17 as means to decouple magnetic impurity and carrier concentrations.…”

Section: Introductionmentioning

confidence: 51%

Evolution of the magnetic anisotropy with carrier density in hydrogenatedGa1−xMnxAs

et al. 2007

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The magnetic properties of ͑Ga,Mn͒As thin films depend on both the Mn doping level and the carrier concentration. Using a post growth hydrogenation process, we show that it is possible to decrease the hole density from 1 ϫ 10 21 cm −3 to Ͻ 10 17 cm −3 while keeping the manganese concentration constant. For such a series of films, we have investigated the variation of the magnetization, the easy and hard axes of magnetization, the critical temperatures, the coercive fields, and the magnetocrystalline anisotropy constants as a function of temperature, using magnetometry, ferromagnetic resonance, and magnetotransport measurements. In particular, we provided evidence that magnetic easy axes flipped from out-of-plane ͓001͔ to in-plane ͓100͔ axis, followed by the ͗110͘ axes, with increasing hole density and temperature. Our study concluded on a general agreement with mean-field theory predictions of the expected easy axis reversals, and of the weight of uniaxial and cubic anisotropies in this material.

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Section: Introductionmentioning

confidence: 51%

Evolution of the magnetic anisotropy with carrier density in hydrogenatedGa1−xMnxAs

et al. 2007

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“…[20]. That work addressed the fundamental technical challenge inhibiting the incorporation of ferromagnetic layers into traditional III-V Collector heterostructures: the low growth temperature required to prevent phase segregation of MnAs precipitates leads to the inclusion of As interstitial and antisite defects, which in turn completely compensates electronic doping.…”

Section: Growthmentioning

confidence: 99%

“…This low growth temperature in turn results in the incorporation of excess As, typically resulting in As interstitial and antisite defects that form deep electronic traps and quench the electronic functionality necessary for diode or transistor functionality. Here we take advantage of advances in the growth of high electronic quality III-As heterostructures at low growth temperature (typically 230º C) [20] to embed a magnetically active ferromagnetic layer within the base layer of a heterojunction bipolar transistor (HBT). These proof of principle devices exhibit gain greater than one concurrent with robust ferromagnetism, demonstrating a critical step in the development of an active spin functional device architecture.…”

Section: Introductionmentioning

confidence: 99%

Experimental demonstration of a magnetic bipolar junction transistor

2012

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The field of semiconductor spintronics has pursued the development of novel device architectures exploiting the spin degree of freedom in addition to, or in place of, traditional charge based functionality. In particular, theoretical modeling has predicted that the addition of a magnetic base layer to a bipolar junction transistor has the potential to serve as an exceptionally efficient spin filter, add intrinsically non-volatile functionality and exhibit extremely fast switching. Here, we present the experimental implementation of this scheme via the inclusion of a digitally-doped (Ga,Mn)As layer into the p region of an n-p-n III-As heterojunction bipolar transistor. These proof of principle devices exhibit gain greater than one, concurrent with robust ferromagnetism, which demonstrates a critical step in the development of an active spin functional device architecture.

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“…Recently some degree of success in raising the ferromagnetic ordering temperature has been obtained with digitally doped samples, where the dopant is deposited periodically rather than continuously during the growth. 3,4 However, there has been little progress in understanding the atomic-scale structure of the doping profile in such samples.…”

Section: Introductionmentioning

confidence: 99%

Structure of GaSb digitally doped with Mn

2005

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Cross-sectional scanning tunneling microscopy ͑XSTM͒ and density functional theory have been used to characterize the structure of GaSb digitally doped with Mn. The Mn dopants are found in both isolated substitutional form as well as in large clusters of zinc-blende MnSb commensurate with the surrounding GaSb matrix. Theoretical calculations predict that these two forms of Mn in the digitally doped layers will have a very different appearance in XSTM images. Substitutional Mn enhances the local density of states near the surface, thus appearing higher in a filled-state image. In contrast, MnSb clusters induce substantial structural relaxation at the ͕110͖ surface, and therefore appear as localized depressed regions with negligible perturbation of the surrounding GaSb.

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Independent electronic and magnetic doping in (Ga,Mn)As based digital ferromagnetic heterostructures

Cited by 32 publications

References 24 publications

Evolution of the magnetic anisotropy with carrier density in hydrogenatedGa1−xMnxAs

Evolution of the magnetic anisotropy with carrier density in hydrogenatedGa1−xMnxAs

Experimental demonstration of a magnetic bipolar junction transistor

Structure of GaSb digitally doped with Mn

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