Indium Arsenide-Based Spontaneous Emission Sources (Review: a Decade Later)

Karandashev, S. A.; Matveev, B. A.; Remennyi, M. A.

doi:10.1134/s1063782619020131

Cited by 16 publications

(12 citation statements)

References 41 publications

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“…It is naturally to assume that the aforementioned temperature T refers to the p‐n junction temperature T p–n ; in this research we ignore a possible mismatch of the T and T p–n values. The obtained heating effect and related Δ T values are comparable with the experimental [ 16,20 ] and simulated [ 21 ] data for heterostructures that are close to ours.…”

Section: Resultssupporting

confidence: 90%

“…In contrast, the internal quantum efficiency (IQE) in mid‐IR InAs‐based LEDs is well below the unit ranging from 2% to 20% according to the data published in literature. [ 5,16 ] Low IQE value makes strong ground for the transformation of nearly all electrical power defined as I × U into the heat by a nonradiative Auger recombination process. Furthermore, the optical extraction efficiency of photons from flat surface in mid‐IR LEDs ( g ) is limited to ≈2% (based on the well‐known refractive index constraints g ≈ (4 × ñ 2 ) −1 , [ 5 ] which creates an additional contribution to heat.…”

Section: Resultsmentioning

confidence: 99%

“…The latter IQE value looks reasonable taking into account the statistics and considerations in refs. [5,16]. Since (1– g × IQE)× I × ( U – I × R s ) >> ( I 2 × R s ), we will therefore further refer to the electrically induced heat at I LED < 120 mA as the “Auger heat”.…”

Section: Resultsmentioning

confidence: 99%

“…We used InAsSbP/InAs DH whose band gap schematic and ability to operate both as PD and LED have been previously described in several papers, for example, in ref. [16]. The DHs were grown onto heavily doped n + ‐InAs (001) substrates with n + ≈ 2 × 10 18 cm −3 .…”

Section: Devices and Experiments Detailsmentioning

confidence: 99%

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p‐InAsSbP/n‐InAs Double Heterostructure as an On‐Chip Midinfrared Evanescent Wave Sensor of Liquids

Karandashev

Lukhmyrina

Matveev

et al. 2021

Physica Status Solidi (a)

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I–V and L–I characteristics as well as photocurrent in monolithic p‐InAsSbP/n‐InAs double heterostructure (λ = 3.4 μm) with several mesas/individual diodes grown onto a single n+‐InAs substrate have been measured at an activation of one of the diodes at ambient temperature in the presence of water, ethanol, and H20 + C2H5OH mixture at the n+‐InAs substrate surface. Adequately sufficient photocurrent values, the evidence for the absorption of internally reflected infrared radiation at the n+‐InAs substrate/liquid interface together with the correlation between the photocurrent and liquid chemical composition indicate the possibility of developing p‐InAsSbP/n‐InAs double heterostructures into a miniature monolithic “on‐chip” evanescent wave sensor of different liquids.

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Section: Resultssupporting

confidence: 90%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Devices and Experiments Detailsmentioning

confidence: 99%

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p‐InAsSbP/n‐InAs Double Heterostructure as an On‐Chip Midinfrared Evanescent Wave Sensor of Liquids

Karandashev

Lukhmyrina

Matveev

et al. 2021

Physica Status Solidi (a)

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“…The on-chip sensor (Fig. 1) was manufactured from on the InAsSbP/InAs DH; its energy band diagram, as well as the operational capability both of PD, and of LED were earlier described in [12]. The DH layout is given in the inset in the top left corner in Fig.…”

Section: Samples and Study Methodsmentioning

confidence: 99%

On-chip ATR sensor (λ = 3.4 μm) based on InAsSbP/InAs double heterostructure for the determination of ethanol concentration in aqueous solutions

Karandashev

Klimov

Lukhmyrina

et al. 2022

Optics and Spectroscopy

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We discuss photoelectrical properties of an on-chip attenuated total reflection (ATR) sensor for the ethanol concentration measurements in an aqueous solution. The on-chip sensor/microchip was made from a p-InAsSbP/n-InAs monolithic double heterostructure with three mesas/individual diodes grown on a single n+-InAs substrate/waveguide. Two heterostructure diodes were used as photodiodes, while the third one - as a LED. The ethanol concentration was measured via an algorithm based on analysis of the I-V characteristic parameters of a photodiode and the L-I characteristics of the LED. Keywords: photodiodes in the mid-IR range, LEDs in the mid-IR range, on-chip sensor, optical sensors, ATR sensor.

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Low frequency noise in double heterostructure P-InAsSbP/n-InAs mid-IR photodiodes at cryogenic temperature: Photovoltaic mode and forward bias

Dyakonova

Karandashev

Levinshteǐn

et al. 2020

Infrared Physics & Technology

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Indium Arsenide-Based Spontaneous Emission Sources (Review: a Decade Later)

Cited by 16 publications

References 41 publications

p‐InAsSbP/n‐InAs Double Heterostructure as an On‐Chip Midinfrared Evanescent Wave Sensor of Liquids

p‐InAsSbP/n‐InAs Double Heterostructure as an On‐Chip Midinfrared Evanescent Wave Sensor of Liquids

On-chip ATR sensor (λ = 3.4 μm) based on InAsSbP/InAs double heterostructure for the determination of ethanol concentration in aqueous solutions

Low frequency noise in double heterostructure P-InAsSbP/n-InAs mid-IR photodiodes at cryogenic temperature: Photovoltaic mode and forward bias

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