Indium–carbon pairs in germanium

Abstract

The interactions of carbon with the probe nucleus 111In have been studied in germanium using the perturbed angular correlation method, which has the ability to detect the microscopic environments of the probe atom by means of the interaction of the nuclear moments of the probe with the surrounding electromagnetic fields. At high dose carbon implantation in germanium two complexes have been identified by their unique quadrupole interaction frequencies. An interaction frequency of νQ1 = 207(1) MHz (η = 0.16(3)) appeared at annealing temperatures below 650 °C. Above 650 °C, it was replaced by a second interaction frequency of νQ2 = 500(1) MHz (η = 0). The frequencies are attributed to two different carbon–indium pairs. The orientation of the corresponding electric field gradients and the thermal stability of the defect complexes are studied.

First PAC experiments in MAX-phases

“…Nevertheless, the identical frequency ν Q = 348 MHz is observed in two different compounds. The strength of the observed EFGs is similar to impurity-In pairs in semiconductors [10]. We propose, that the 111 In probe-sitting on the A-site-catches an interstitial carbon atom.…”

The Potential of the Perturbed Angular Correlation Technique in Characterizing Semiconductors

“…This sensitivity is advantageous for discriminating the presence of intrinsic and extrinsic defects in semiconductors, which is in general a basic problem in defect studies. Extensive PAC data are available on such measurements in semiconductors, [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25] which can be summarized as follows:…”

“…On the basis of unique and distinct EFG, indiumdopant pairs in silicon, [8][9][10] and indium-vacancy, indium-interstitial, and indium-carbon pairs in germanium 11,12 were identified using PAC technique with 111 In probe atoms. The formation of similar defect complexes was also observed in II-VI semiconductors CdTe, ZnTe, ZnSe, and Hg 1Àx Cd x Te.…”

“…Moreover, the EFG sensed by PAC probe atoms represent the local point symmetry about the probe and not necessarily the overall symmetry of the crystal. In the past, PAC spectroscopy has been utilized to observe the dopant-defect/dopant interaction in various semiconductors, e.g., using 111 In/Cd probe atoms, In-defect/dopant pairs have been observed in Ge 11,12 and Si. [8][9][10][17][18][19]44 Recently, we have observed such pairs with 100 Pd/Rh probe atoms in highly doped Si, i.e., Pd-vacancy defect pair in highly doped n-Si 41 and Pd-B defect pair in highly doped p-Si.…”

Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping

“…Co-doping C with In is one of the most promising approaches to meet such a requirement. It has been reported that in both Si [3,[11][12][13] and Ge, [14][15][16] enhancement of In electrical activation was realized by C co-doping. Above-equilibrium solid solubility was attained in both substrates as a consequence of C-In pair formation that suppressed In precipitation.…”