Indium-doped CdS film on p-type silicon: An efficient heterojunction solar cell

Scafè, E.; Maletta, G.; Tomaciello, R.; Alessandrini, Patricia; Camanzi, A.; Angelis, L. De; Galluzzi, F.

doi:10.1016/0379-6787(83)90004-2

Cited by 9 publications

(5 citation statements)

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“…The Bi 2 S 3 -CA cell produces V oc of 330 mV and J sc of 1.0 mA/cm 2 with the roll-over through presence of thick oxide layer, similar to that reported for c-Si/CdS junctions. 58 In the case of the cell Bi 2 S 3 -(Bi þ S) and Bi 2 S 3 -VT, J sc is improved, but the presence of surface states reduces V oc to 250-300 mV, as suggested through results given in Fig. 8.…”

Section: Resultsmentioning

confidence: 75%

“…The presence of an oxide layer of thickness > 1 nm or of deep trapping states in the Bi 2 S 3 layer would cause 'roll-over' in the J-V characteristics with reduction in the J sc as reported for c-Si/CdS (Ref. 58) and c-Si/ZnO (Ref. 59) junctions.…”

Section: Resultsmentioning

confidence: 75%

“…The V oc of the cells is 595 mV, which is close to the value of V bi (570 mV) seen in the Fig.7a. However, the presence of interfacial surface states would reduce the V oc : to 518 and 360 mV for surface state densities of 10 12 and 10 14 m À2 eV À1 , as shown in Fig.8.The presence of an oxide layer of thickness > 1 nm or of deep trapping states in the Bi 2 S 3 layer would cause 'roll-over' in the J-V characteristics with reduction in the J sc as reported for c-Si/CdS (Ref 58…”

mentioning

confidence: 53%

“…At 2.0 nm thickness of the oxide layer, V oc drops from 540 to 300 mV, and J sc from 32 to 8 mA/cm 2 . 58 In sputtered c-Si/ZnO cells, V oc of 400 mV and J sc of 17.3 mA/cm 2 drop to 300 mV and J sc of 11.1 mA/cm 2 depending on the sample preparation, producing severe roll-over in the J-V characteristics. While an optimum SiO x thickness is desirable in MIS and SIS structures, 60,61 in order to passivate the silicon surface and hence minimize the interface states, the insulator has to be very thin to allow for the exchange of the carriers.…”

Section: Resultsmentioning

confidence: 99%

“…In c-Si/CdS junctions formed by evaporated CdS thin films on (p)Si wafer carrying carefully controlled SiO 2 thickness, 1-5 nm, the effect of the oxide layer is insignificant only at oxide thickness less than 1.3 nm. At 2.0 nm thickness of the oxide layer, V oc drops from 540 to 300 mV, and J sc from 32 to 8 mA/cm 2 58. In sputtered c-Si/ZnO cells, V oc of 400 mV and J sc of 17.3 mA/cm 2 drop to 300 mV and J sc of 11.1 mA/cm 2 depending on the sample preparation, producing severe roll-over in the J-V characteristics.…”

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confidence: 98%

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Analysis of a Bismuth Sulfide/Silicon Junction for Building Thin Film Solar Cells

Becerra

Nair

2011

J. Electrochem. Soc.

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Feasibility of combining p-type crystalline Si (c-Si) of 200–8000 nm in thickness with an n-type bismuth sulfide (Bi2S3) thin film of 300 nm in thickness for thin film solar cell is analyzed. Theoretical analysis shows that the high optical absorption coefficient (105 cm−1) of Bi2S3 results in a light-generated current density (JL ) of >20 mA/cm2 for a c-Si(200 nm)/Bi2S3(300 nm) stack at a combined film thickness of 500 nm, and with an open circuit voltage (Voc ) of nearly 600 mV. Proof-of-concept cell structures were prepared on p-type c-Si wafers of electrical resistivity 1 Ω cm. Any oxide layer at the interface significantly deteriorates the cell parameters. In a cell prepared using evaporated n-Bi2S3 on (p) c-Si, Jsc is 3 mA/cm2; Voc is 360 mV; and η is 0.5%; which improved to: 7.2 mA/cm2, 485 mV and 1.7%, respectively, after heating the cell in forming gas. A cell with an Sb2S3 (40 nm) thin film as an antireflective coating on Bi2S3, produced: Jsc of 10 mA/cm2; Voc of 480 mV; and η of 2.4%. Theoretical simulation suggests that better cell fabrication could lead to: Jsc of 26 mA/cm2; Voc of 600 mV; and η of 10%.

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Section: Resultsmentioning

confidence: 75%

Section: Resultsmentioning

confidence: 75%

mentioning

confidence: 53%

Section: Resultsmentioning

confidence: 99%

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confidence: 98%

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