Influence of metal (M = Cd, In, and Sn) dopants on the properties of spin-coated WO3 thin films and fabrication of temperature-dependent heterojunction diodes

A sight of view on electrical impacts, structural properties and surface roughness of tungsten trioxide thin film: effect of substrate temperatures in WO3/Si device fabrication

“…In metal oxides of stoichiometric proportions, the absorption of light is low and the visible region of the spectrum has a great transmission rate, while metal-rich coatings frequently absorb a large amount of light. At a visible spectrum of 550 nm, the film deposited at 350 °C has an absorbance of 0.8, this conclusion is supported by data in [22,52]. The considerable rise in absorbance of the films at 300 nm wavelengths is affected by the primary absorption edge of WO 3 .…”

Photosensitive activity of fabricated core-shell composite nanostructured p-CuO@CuS/n-Si diode for photodetection applications

“…The generation of charge carriers and the charge carrier transport mechanism of TMO and TMC nanomaterials are most favorable for photo sensitive device fabrication [ 2 ]. In previous reports TMO (MoO 3 , WO 3 , and CuO) and TMC (ZnS, MoS 2 , WS 2 and CuS) based photo detectors and are widely studied in terms of effect of morphology, concentration and temperature [ [3] , [4] , [5] , [6] ].…”

Influence of Gd content on structural, electronic, thermoelectric, and optical properties of WO3

“…However, literature related to the band gap is somewhat confusing as below 3 eV values of the band gap were obtained by assuming an indirect transition [14]. Many attempts have been made for the deposition of WO 3 thin films doped with different metallic ions such as Cr, Ru, CuO, Ti, Tb 3+ , Cd, In, Sn, and Eu 3+ using different fabrication techniques like facile chemical method, template-free hydrothermal method, radio frequency (RF) magnetron sputtering technique, and chemically derived simple low cost spin coating [15][16][17][18][19][20][21][22].…”