Indium droplet formation in InGaN thin films with single and double heterojunctions prepared by MOCVD

Chen, Yung‐Sheng; Liao, Che‐Hao; Kuo, Chie‐Tong; Tsiang, Raymond Chien‐Chao; Wang, Hsiang‐Chen

doi:10.1186/1556-276x-9-334

Cited by 16 publications

(8 citation statements)

References 62 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…They belong to InGaN and GaN crystal, respectively. While the extra characteristic peak located at the 2θ = 32.8°has been verified to come from the In droplet [16,17]. So we can make a conclusion that the quantum dots we observed on the InGaN surface with the two-step cooling process is the In droplet.…”

Section: Resultssupporting

confidence: 57%

“…Previous studies have shown that there exist three different states of In atoms in the process of InGaN layer growth [16,17]. The first one is the In atoms in InGaN alloy crystal lattice, which is the main part and the target product of InGaN layer growth; the second one is the InN alloy which always appears on the surface of the InGaN layer; and the third one is the In droplet which may appear in some special growth condition.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process

et al. 2019

View full text Add to dashboard Cite

A new method to grow Indium quantum dots (In QDs) on the surface of an epitaxial InGaN layer by MOCVD is proposed. Uniform-sized In quantum dots have been found to form on the surface of an InGaN layer when a twostep cooling process is taken. Through analyzing, we found that the formation of In QDs on the surface is due to the reaction between the surface In-rich layer and the carrier gas H 2 at the lower temperature period in the twostep cooling process. At the same time, as the density of In QDs is closely dependent on the surface In-rich layer, this provides us a way to study the surface property of the InGaN layer directly.

show abstract

Section: Resultssupporting

confidence: 57%

Section: Resultsmentioning

confidence: 99%

Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process

et al. 2019

View full text Add to dashboard Cite

show abstract

“…We confirm that the quantum wells are grown in the semi-polar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) face direction. Quantum wells on the semi-polar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) face less lattice mismatches between InGaN and GaN, as reported by previous studies [29][30][31][32][33][34][35][36]. We believe that less lattice mismatches result in better-quality GaN nanorods and InGaN/GaN quantum wells.…”

Section: Tem and Hrtem Measurementssupporting

confidence: 55%

Nanostructure analysis of InGaN/GaN quantum wells based on semi-polar-faced GaN nanorods

Huang

Feng

Weng

et al. 2017

Opt. Mater. Express

Self Cite

View full text Add to dashboard Cite

We demonstrate a series of InGaN/GaN double quantum well nanostructure elements. We grow a layer of 2 μm undoped GaN template on top of a (0001)-direction sapphire substrate. A 100 nm SiO 2 thin film is deposited on top as a masking pattern layer. This layer is then covered with a 300 nm aluminum layer as the anodic aluminum oxide (AAO) hole pattern layer. After oxalic acid etching, we transfer the hole pattern from the AAO layer to the SiO 2 layer by reactive ion etching. Lastly, we utilize metal-organic chemical vapor deposition to grow GaN nanorods approximately 1.5 μm in size. We then grow two layers of InGaN/GaN double quantum wells on the semi-polar face of the GaN nanorod substrate under different temperatures. We then study the characteristics of the InGaN/GaN quantum wells formed on the semi-polar faces of GaN nanorods. We report the following findings from our study: first, using SiO 2 with repeating hole pattern, we are able to grow high-quality GaN nanorods with diameters of approximately 80-120 nm; second, photoluminescence (PL) measurements enable us to identify Fabry-Perot effect from InGaN/GaN quantum wells on the semi-polar face. We calculate the quantum wells' cavity thickness with obtained PL measurements. Lastly, high resolution TEM images allow us to study the lattice structure characteristics of InGaN/GaN quantum wells on GaN nanorod and identify the existence of threading dislocations in the lattice structure that affects the GaN nanorod's growth mechanism.

show abstract

“…EL spectra of the c -LED just coincide with the lower energy shoulder of that for the m -LED. Both carrier localization effect [21–23] and QCSE [3–8] in the c -LED contribute to luminescence. The large difference of EL peak positions for the m -LED from that for the c -LED can’t be discussed by only one effect.…”

Section: Resultsmentioning

confidence: 99%

Efficient Carrier Injection, Transport, Relaxation, and Recombination Associated with a Stronger Carrier Localization and a Low Polarization Effect of Nonpolar m-plane InGaN/GaN Light-Emitting Diodes

2017

View full text Add to dashboard Cite

Based on time-resolved electroluminescence (TREL) measurement, more efficient carrier injection, transport, relaxation, and recombination associated with a stronger carrier localization and a low polarization effect in a nonpolar m-plane InGaN/GaN light emitting diode (m-LED), compared with those in a polar c-LED, are reported. With a higher applied voltage in the c-LED, decreasing response time and rising time improve device performance, but a longer recombination time degrades luminescence efficiency. By using an m-LED with a stronger carrier localization and a low polarization effect, shorter response, rising, and recombination times provide more efficient carrier injection, transport, relaxation, and recombination. These advantages can be realized for high-power and high-speed flash LEDs. In addition, with a weaker carrier localization and a polarization effect in the c-LED, the slower radiative and faster nonradiative decay rates at a larger applied voltage result in the slower total decay rate and the lower luminescence efficiency. For the m-LED at a higher applied voltage, a slow decreasing nonradiative decay rate is beneficial to device performance, while the more slowly decreasing and overall faster radiative decay rate of the m-LED than that of the c-LED demonstrates that a stronger carrier localization and a reduced polarization effect are efficient for carrier recombination. The resulting recombination dynamics are correlated with the device characteristics and performance of the c- and m-LEDs.

show abstract

Indium droplet formation in InGaN thin films with single and double heterojunctions prepared by MOCVD

Cited by 16 publications

References 62 publications

Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process

Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process

Nanostructure analysis of InGaN/GaN quantum wells based on semi-polar-faced GaN nanorods

Efficient Carrier Injection, Transport, Relaxation, and Recombination Associated with a Stronger Carrier Localization and a Low Polarization Effect of Nonpolar m-plane InGaN/GaN Light-Emitting Diodes

Contact Info

Product

Resources

About