Indium-facilitated growth and characterization of N-polar GaN by RF plasma-assisted molecular beam epitaxy

Huang, Jung-Jie; Hsieh, Kuang-Yeu; Tsai, Jenn-Kai; Huang, Hsuan‐Jung; Hsieh, Chiung-Wen; Lee, Y.C.; Chuang, K.-L.; Lo, Ikai; Tu, Li‐Wei

doi:10.1016/j.jcrysgro.2003.11.062

Cited by 3 publications

(2 citation statements)

References 19 publications

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“…More recently, a similar behaviour of In has also been recognised during the epitaxy of GaN-based alloys and heterostructures with growth techniques as different as MBE [40], metal-organic vapor phase epitaxy [41,42] or hydride vapour phase epitaxy [43]. Finally, the use of In as an isoelectronic dopant in quasi lattice-matched GaAs-based heterostructures has also been demonstrated to improve the crystal quality [44].…”

Section: Surfactants In Iii-v Semiconductor Epitaxymentioning

confidence: 99%

MBE growth and interface formation of compound semiconductor heterostructures for optoelectronics

Tournié¹,

Trampert²

2007

Physica Status Solidi (b)

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PACS 81.07.-b, 81.15.HiWe give a bird's-eye view of the interface formation during MBE growth of various quasi lattice-matched as well as highly-mismatched semiconductor heterostructures. We show that the parameters controlling the growth mode and the interface formation are numerous and that the optimum interface configuration depends on the materials system and on the target application. Our results obtained from various semiconductor materials systems demonstrate that this growth and interface-related problem is much more complex than it has often been considered for many years.

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Section: Surfactants In Iii-v Semiconductor Epitaxymentioning

confidence: 99%

MBE growth and interface formation of compound semiconductor heterostructures for optoelectronics

Tournié¹,

Trampert²

2007

Physica Status Solidi (b)

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“…Despite its low melting point, it is safe to use in vacuum systems due to its low vapor pressure, which also limits its incorporation during the growth of most materials. 1 However, indium has been shown to act as a surfactant in the growth of GaN (and AlN, AlGaN) via molecular beam epitaxy 2,3 and metalorganic chemical vapor deposition. [4][5][6][7] In these materials, the formation of an In adlayer increases the surface diffusion of N adatoms, promoting enhanced stepflow growth and improved structural quality.…”

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confidence: 99%

Mobility of indium on the ZnO(0001) surface

Heinhold

Reeves

Williams

et al. 2015

Applied Physics Letters

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The mobility of indium on the Zn-polar (0001) surface of single crystal ZnO wafers was investigated using real-time x-ray photoelectron spectroscopy. A sudden transition in the wettability of the ZnO(0001) surface was observed at similar to 520 degrees C, with indium migrating from the (000 (1) over bar) underside of the wafer, around the non-polar (1 (1) over bar 00) and (11 (2) over bar0) sidewalls, to form a uniform self-organized (similar to 20 angstrom) adlayer. The In adlayer was oxidized, in agreement with the first principles calculations of Northrup and Neugebauer that In2O3 precipitation can only be avoided under a combination of In-rich and Zn-rich conditions. These findings suggest that unintentional In adlayers may form during the epitaxial growth of ZnO on indium-bonded substrates. (C) 2015 AIP Publishing LLC.publishersversionPeer reviewe

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