Optical characterization of InxGa1−xN alloys

Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content

“…At boron percentage of 0% and based on Vegard's law the average In content in the ternary InGaN reference layer was equal to 19.5%. Atomic force microscopy showed that the BInGaN surface exhibits morphology similar to that reported for InGaN [10] and RMS roughness was between 3 and 5 nm.…”

Progress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy Conversion

“…[66,[96][97][98] As a result of this lattice mismatch, it has proven very difficult to avoid crystalline deterioration in In x Ga 1Àx N films with indium contents between 20 and 80 pct. [25,98] Compared to other III-nitride alloys, epitaxially grown In x Ga 1Àx N films have an extremely high threading dislocation density of up to 10 10 dislocations/cm 2 . [99,100] Despite this, In-…”

Analytical model for the optical functions of indium gallium nitride with application to thin film solar photovoltaic cells

“…While indium gallium nitride (InxGa1-xN) semiconductors have been used in blue and ultraviolet LEDs for many years [1,2], only recently has significant research been performed on the material for solar photovoltaic (PV) applications. The optoelectronic properties of InxGa1-xN make the material very well-suited for use in PV because the band gap of InxGa1-xN can be tuned from 0.7 eV to 3.4 eV by altering the indium content (x) in the material [3][4][5][6][7]. However, indium nitride (InN) and gallium nitride (GaN) have a lattice mismatch of 10% which results in phase segregation and poor quality In-rich films under most growth conditions with conventional MBE or MOCVD methods [3].…”

“…However, indium nitride (InN) and gallium nitride (GaN) have a lattice mismatch of 10% which results in phase segregation and poor quality In-rich films under most growth conditions with conventional MBE or MOCVD methods [3]. As a result, a number of optical characterization studies have been performed on InxGa1-xN alloys with low indium contents (x) [7][8][9][10][11] but few on alloys with x>0.2 [12]. Fortunately, these alloy films can be created using a new plasmaenhanced evaporation deposition process, which is well-suited for large-scale manufacturing of photovoltaic devices because it can deposit InxGa1-xN on silicon dioxide [13].…”