Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content

Gautier, S.; Orsal, G.; Moudakir, T.; Maloufi, Nabila; Jomard, François; Alnot, M.; Djebbour, Zakaria; Sirenko, A. A.; Abid, Mohamed; Pantzas, Konstantinos; Ferguson, Ian T.; Voss, Paul L.; Ougazzaden, A.

doi:10.1016/j.jcrysgro.2009.11.040

Cited by 16 publications

(14 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This nanowire system offers a unique platform to truly translate the well-established fields of white-light spectroscopy and interferometry to the nanoscale, using simple, low-cost laser sources. In addition, it could be possible to utilize electroluminescence to drive nano-scale white-light emission in these wires, however, likely changes to the electrically driven emission spectrum will require further characterization and development.Through further optimization of the optical properties of these wires, including doping with In-, P-, or B-, it may be possible to introduce some spectral tunability or enhanced emission intensity as well [26,27]. Such dopants act to shift the native bandgap to lower energies, allowing for lower energy two photon pumping (>700 nm, <1.8 eV) and lower energy defect states, shifting WL generation into the near-IR, further extending an already broad range of macro-and microscale spectroscopic techniques to the sub-wavelength spatial regime.…”

Section: Resultsmentioning

confidence: 99%

Optical cavity characterization in nanowires via self-generated broad-band emission

et al. 2011

View full text Add to dashboard Cite

Broadband white light is of great spectroscopic value and would be a powerful tool for nanoscale spectroscopy, however, generation and direction of white light on this length scale remains challenging. Here, we demonstrate the generation of broadband white light in sub-wavelength diameter Gallium Nitride (GaN) wires by coincident one- and two-photon absorption mediated via defect states. This generation of broadband, "white" light enables single-nanowire interferometric measurements of the nanowires themselves via analysis of the Fabry-Pérot fringes that overlay the entirety of the emission spectrum. The quality factor and finesse of individual nanowire cavities were measured and calculated to be 186 ± 88 and 3.05 ±0.6 respectively, averaged over 20 individual wires. This work presents a new, simple approach for the generation and direction of broad band white light at sub-diffraction limit length scales, ideal for translating classical white light spectroscopies to higher spatial resolutions then previously achieved.

show abstract

Section: Resultsmentioning

confidence: 99%

Optical cavity characterization in nanowires via self-generated broad-band emission

et al. 2011

View full text Add to dashboard Cite

show abstract

“…However, indium is not always good in neutron detectors since it also an alpha detector which takes long lifetimes for recovery after sensing this source of radiation. Gadolinium is also of interest in GaN thin films because of its high Z number and its extremely high cross-section for thermal neutron detection of ~250,000 barns (116). Gd behaves as a stable center in GaN, substituting for a Ga atom, and has primarily been investigated for spintronic applications.…”

Section: Iii-nitrides For Nuclear Detectionmentioning

confidence: 99%

(Invited) The III-Nitrides as a Universal Compound Semiconductor Material: A Review

Zhou¹,

Ghods²,

Saravade³

et al. 2017

ECS Trans.

View full text Add to dashboard Cite

III-nitrides are attracting considerable attention as promising materials for a wide variety of applications due to their wide coverage of direct bandgap range, high electron mobility, high thermal stability and many other exceptional properties. The lightemitting diodes based on III-nitrides revolutionize the solid-state lighting industry. III-nitrides based solar cells and thermoelectric generators support the sustainable energy progress, and the IIInitrides are better alternatives for power and radio frequency (RF) electronics compared with silicon. The doped III-nitrides' magnetic properties and sensitivity to radiation can contribute to novel spintronic and nuclear detection devices. This paper will review III-nitride material properties and their corresponding applications in LEDs, solar cells, power and radio frequency (RF) electronics, magnetic devices, thermoelectrics and nuclear detection. The typical values of electrical, optical, thermoelectric, magnetic properties are cited, the current state of art investigations are reported, and the future applications are estimated.

show abstract

“…Among them, an InGaN system is interesting because of optoelectronic device applications covering a broad range of wavelengths from ultraviolet (3.4 eV for GaN) to infrared (0.7 eV for InN). On the other hand, InGaN layers grown on GaN substrates have the disadvantage of lattice mismatch for high In-content, which will lead to high misfit dislocation densities [2]. In addition, the large internal field induced by the piezoelectric and spontaneous polarizations exists in the active region.…”

Section: Introductionmentioning

confidence: 99%

Theoretical studies on light emission characteristics of high-efficiency BInGaN/GaN quantum well structures with blue spectral range

Park

Ahn

2016

Superlattices and Microstructures

View full text Add to dashboard Cite

Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content

Cited by 16 publications

References 14 publications

Optical cavity characterization in nanowires via self-generated broad-band emission

Optical cavity characterization in nanowires via self-generated broad-band emission

(Invited) The III-Nitrides as a Universal Compound Semiconductor Material: A Review

Theoretical studies on light emission characteristics of high-efficiency BInGaN/GaN quantum well structures with blue spectral range

Contact Info

Product

Resources

About