Indium nitride epilayer prepared by UHV-plasma-assisted metalorganic molecule beam epitaxy

Abstract

Articles you may be interested inEffect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy AIP Advances 4, 027114 (2014); 10.1063/1.4866445 Hydrogen limited nitrogen incorporation in III-V dilute nitrides grown by rf nitrogen plasma assisted chemical beam epitaxy Effects of hydrogen on the morphology and electrical properties of GaN grown by plasma-assisted molecularbeam epitaxy Appl. Phys. Lett. 86, 121914 (2005); 10.1063/1.1890482 Growth mechanism of AlN by metal-organic molecular beam epitaxy J. Appl. Phys. 96, 6272 (2004); 10.1063/1.1813623Effect of N to Ga flux ratio on the GaN surface morphologies grown at high temperature by plasma-assisted molecular-beam epitaxy Indium nitride films grown at various growth temperatures were prepared on GaN buffer layers using self-designed plasma-assisted metal-organic molecular beam epitaxy. The influence of substrate temperature on film crystallinity, surface morphology, optical, and electrical properties was studied using x-ray diffraction (XRD), transmission electron microscopy (TEM), field emission scanning electron microscopy (FE-SEM), UV/VIS/NIR spectrophotometer, and Hall measurement. The results show that the InN films grown on the GaN template at 500 o C are of good quality, and the full width at half maximum of InN(0002) x-scan is around 1000 arc sec. The SEM images revealed that the average growth rate is 1.1 lm=h, which is comparable to the conventional epitaxial techniques. These results indicate that the electronic properties and crystalline quality can be significantly improved by optimizing the growth temperature.

Effect of Growth Temperature on Structural Quality of In-Rich InxAl1−xN Alloys on Si (111) Substrate by RF-MOMBE

“…However, when the growth of temperature is raised above 520 ∘ C, the InN may start to decompose because of its low thermal stability. For growth at 550 ∘ C which was close to decomposition temperature of InN [20], lower indium composition was then obtained. For growth above 550 ∘ C, InAlN exhibits an extremely weak and broad (0002) peak, suggesting that the crystallinity is poor.…”

Influence of V/III Flow Ratio on Growth of InN on GaN by PA-MOMBE

“…The InN films were grown at various TMIn flow rates for 30 min. In our previous study of PA-MOMBE growth of InN epilayer on GaN buffer layer, 28 we found that the optimum temperature for the growth of high-quality InN films was 500 • C. Therefore, the nominal growth temperature (T G ) at 500 • C was used in the present study for the epitaxial growth of InN films on the GaN template for all the grown films. Structural properties of the InN epilayers were characterized with X-ray diffraction (XRD) using a Cu Kα X-ray line (XRD, Siemens D5000).…”

Epitaxial growth of semipolar InN($10\bar{1}3$) on LaAlO3substrate: Epitaxial relationship analysis

“…20,21) Our previous study indicated that the growth temperatures of InN-related alloys were lower using radio-frequency metalorganic molecular beam epitaxy (RF-MOMBE) growth than MOCVD growth. 22) In our previous study, semi-polar InN layers were grown on a LaAlO 3 (112) substrate. The result indicated that semipolar ( 1013) InN layers can be grown at 510 °C with a threedimensional morphology and an electron mobility of 494 cm 2 V −1 s −1 .…”