Indium oxide thin film prepared by low temperature atomic layer deposition using liquid precursors and ozone oxidant

Maeng, W. J.; Choi, Dongwon; Park, Jozeph; Park, Jin‐Seong

doi:10.1016/j.jallcom.2015.07.150

Cited by 54 publications

(45 citation statements)

References 38 publications

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“…The value is even higher than those (0.7 22 and 0.8 Å per cycle 21 ) reported from the same indium source as ours but with the use of a different oxygen source, water and ozone, for the ALD-InO x growth process. While the less reactive water or ozone reactant would not completely finish the 2nd half reaction with the chemisorbed indium precursor for ALD, the increasing reactive sites of the chemisorbed precursor on the surface of the film by virtue of the strong oxidant, oxygen plasma, results in a higher film growth rate than that seen with the thermal ALD process.…”

Section: Resultscontrasting

confidence: 65%

“…Recently, Maeng et al used diethyl[bis(trimethylsilyl)amido]indium (Et 2 InN(SiMe 3 ) 2 ), [3-(dimethyl-amino)]dimethyl-indium (DADI), and triethyl-indium (TEIn) liquid precursors for the growth of InO x films using ozone. 21 They reported a relatively high growth rate (B0.8 Å per cycle) and film resistivity as low as 8 Â 10 À5 O cm. These InO x films, however, were studied as a transparent conducting oxide (TCO) for their low resistivity, not as semiconducting films.…”

Section: Introductionmentioning

confidence: 99%

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High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition

et al. 2016

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Section: Resultscontrasting

confidence: 65%

Section: Introductionmentioning

confidence: 99%

High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition

et al. 2016

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“…It is found that a stable growth rate of ~ 1.46 Å/cycle is achieved in the range of 160 ~ 200 °C, revealing a fast growth rate and a well-defined temperature window for ALD In 2 O 3 films. When the substrate temperature was reduced to 150 °C or increased to 210 °C, the resulting growth rate became larger [19, 20]. The former is attributed to the condensation of InCp on the substrate, whereas the latter is due to the thermal decomposition of InCp at a higher temperature.…”

Section: Resultsmentioning

confidence: 99%

Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors

Zheng

Shao

et al. 2018

Nanoscale Res Lett

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Atomic-layer-deposition (ALD) of In2O3 nano-films has been investigated using cyclopentadienyl indium (InCp) and hydrogen peroxide (H2O2) as precursors. The In2O3 films can be deposited preferentially at relatively low temperatures of 160–200 °C, exhibiting a stable growth rate of 1.4–1.5 Å/cycle. The surface roughness of the deposited film increases gradually with deposition temperature, which is attributed to the enhanced crystallization of the film at a higher deposition temperature. As the deposition temperature increases from 150 to 200 °C, the optical band gap (Eg) of the deposited film rises from 3.42 to 3.75 eV. In addition, with the increase of deposition temperature, the atomic ratio of In to O in the as-deposited film gradually shifts towards that in the stoichiometric In2O3, and the carbon content also reduces by degrees. For 200 °C deposition temperature, the deposited film exhibits an In:O ratio of 1:1.36 and no carbon incorporation. Further, high-performance In2O3 thin-film transistors with an Al2O3 gate dielectric were achieved by post-annealing in air at 300 °C for appropriate time, demonstrating a field-effect mobility of 7.8 cm2/V⋅s, a subthreshold swing of 0.32 V/dec, and an on/off current ratio of 107. This was ascribed to passivation of oxygen vacancies in the device channel.

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“…Red markers indicate H 2 O as the sole oxygen source; gray markers indicate another oxygen source such as O 3 , H 2 O 2 , or O 2 . The indium sources are 1 and 2 (this work), TMIn (A), Et 2 In[N(SiMe 3 ) 2 ] (B), DADI (C), In[C(N i Pr 2 )(N i Pr) 2 ] 3 (D), InCl 3 (E), InCp (F, G), TEIn (I), Me 2 In(EDPA) (J), and In(tmhd) 3 (K).…”

Section: Figurementioning

confidence: 99%

Obtaining a Low and Wide Atomic Layer Deposition Window (150–275 °C) for In₂O₃ Films Using an In^III Amidinate and H₂O

Kim

Jayaraman

Chua

et al. 2018

Chemistry A European J

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Indium oxide is a major component of many technologically important thin films, most notably the transparent conductor indium tin oxide (ITO). Despite being pyrophoric, homoleptic indium(III) alkyls do not allow atomic layer deposition (ALD) of In O using water as a co-precursor at substrate temperatures below 200 °C. Several alternative indium sources have been developed, but none allows ALD at lower temperatures except in the presence of oxidants such as O or O , which are not compatible with some substrates or alloying processes. We have synthesized a new indium precursor, tris(N,N'-diisopropylformamidinato)indium(III), compound 1, which allows ALD of pure, carbon-free In O films using H O as the only co-reactant, on substrates in the temperature range 150-275 °C. In contrast, replacing just the H of the anionic iPrNC(H)NiPr ligand with a methyl group (affording the known tris(N,N'-diisopropylacetamidinato)indium(III), compound 2) results in a considerably higher and narrower ALD window in the analogous reaction with H O (225-300 °C). Kinetic studies demonstrate that a higher rate of surface reactions in both parts of the ALD cycle gives rise to this difference in the ALD windows.

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Indium oxide thin film prepared by low temperature atomic layer deposition using liquid precursors and ozone oxidant

Cited by 54 publications

References 38 publications

High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition

High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition

Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors

Obtaining a Low and Wide Atomic Layer Deposition Window (150–275 °C) for In₂O₃ Films Using an In^III Amidinate and H₂O

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Indium oxide thin film prepared by low temperature atomic layer deposition using liquid precursors and ozone oxidant

Cited by 54 publications

References 38 publications

High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition

High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition

Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors

Obtaining a Low and Wide Atomic Layer Deposition Window (150–275 °C) for In2O3 Films Using an InIII Amidinate and H2O

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Obtaining a Low and Wide Atomic Layer Deposition Window (150–275 °C) for In₂O₃ Films Using an In^III Amidinate and H₂O