Indium Phosphide Core–Shell Nanowire Array Solar Cells with Lattice-Mismatched Window Layer

Yoshimura, Masashi; Nakai, Eiji; Tomioka, Katsuhiro; Fukui, Takashi

doi:10.7567/apex.6.052301

Cited by 47 publications

(55 citation statements)

References 27 publications

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“…Surface passivated core-shell InP NWs array solar cells fabrication using catalyst-free SA-MOVPE was reported by Yoshimura et al [59]. They grew InP core-multishell NWs on SiO 2 masked InP substrate placed in the horizontal MOVPE system.…”

Section: Synthesis Of Indium Phosphide Nanowiresmentioning

confidence: 98%

Indium phosphide nanowires and their applications in optoelectronic devices

Zafar¹,

Iqbal²

2016

Proc. R. Soc. A.

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Group IIIA phosphide nanocrystalline semiconductors are of great interest among the important inorganic materials because of their large direct band gaps and fundamental physical properties. Their physical properties are exploited for various potential applications in high-speed digital circuits, microwave and optoelectronic devices. Compared to II-VI and I-VII semiconductors, the IIIA phosphides have a high degree of covalent bonding, a less ionic character and larger exciton diameters. In the present review, the work done on synthesis of III-V indium phosphide (InP) nanowires (NWs) using vapourand solution-phase approaches has been discussed. Doping and core-shell structure formation of InP NWs and their sensitization using higher band gap semiconductor quantum dots is also reported. In the later section of this review, InP NW-polymer hybrid material is highlighted in view of its application as photodiodes. Lastly, a summary and several different perspectives on the use of InP NWs are discussed.

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Section: Synthesis Of Indium Phosphide Nanowiresmentioning

confidence: 98%

Indium phosphide nanowires and their applications in optoelectronic devices

Zafar¹,

Iqbal²

2016

Proc. R. Soc. A.

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“…Semiconductor nanowires (NWs) are promising building blocks for next-generation photovoltaics [1][2][3][4][5] . The nanoscale dimensions of NWs provides strain relaxation capability, enabling heteroepitaxy of III-V materials on Si as well as a higher degree of freedom in the design of multijunction solar cells with lattice-mismatched materials 6,7 .…”

Section: Main Textmentioning

confidence: 99%

A Comparative Study of Absorption in Vertically and Laterally Oriented InP Core–Shell Nanowire Photovoltaic Devices

et al. 2015

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We have compared the absorption in InP core-shell nanowire p-i-n junctions in lateral and vertical orientation. Arrays of vertical core-shell nanowires with 400 nm pitch and 280 nm diameter, as well as corresponding lateral single core-shell nanowires, were configured as photovoltaic devices. The photovoltaic characteristics of the samples, measured under 1 sun illumination, showed a higher absorption in lateral single nanowires compared to that in individual vertical nanowires, arranged in arrays with 400 nm pitch. Electromagnetic modeling of the structures confirmed the experimental observations and showed that the absorption in a vertical nanowire in an array depends strongly on the array pitch. The modeling demonstrated that, depending on the array pitch, absorption in a vertical nanowire can be lower or higher than that in a lateral nanowire with equal absorption predicted at a pitch of 510 nm for our nanowire geometry. The technology described in this Letter facilitates quantitative comparison of absorption in laterally and vertically oriented core-shell nanowire p-i-n junctions and can aid in the design, optimization, and performance evaluation of nanowire-based core-shell photovoltaic devices.

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“…In the wavelength range between 370 nm and 730 nm, the internal quantum efficiency (IQE) of the device exceeded 80%, despite the device covering only 18% of the substrate surface. The IQE at shorter wavelengths was much higher than the previous reported InP NW solar cell, 16 and the device had peak IQE of 0.943 at 490 nm without employing a window layer for reflecting minority carriers moving toward the front ITO layer. Moreover, the IQE of our heterojunction cell was significantly greater than that of the current world record holder for InP planar cells 23 in the range of 300 nm and 570 nm.…”

mentioning

confidence: 62%

“…16 We grew p-type InP NWs by selective-area MOVPE using a 20-nmthick SiO 2 mask deposited onto p-type InP (111)A substrates (N A $ 5 Â 10 18 cm À3 ). The SiO 2 pattern was designed to be a triangular periodic array of openings with a diameter, d 0 , of 200 nm and pitch, a, of 400 nm in 1.2 Â 1.2 mm 2 regions.…”

mentioning

confidence: 99%

Indium tin oxide and indium phosphide heterojunction nanowire array solar cells

Yoshimura

Nakai

Tomioka

et al. 2013

Applied Physics Letters

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Heterojunction solar cells were formed with a position-controlled InP nanowire array sputtered with indium tin oxide (ITO). The ITO not only acted as a transparent electrode but also as forming a photovoltaic junction. The devices exhibited an open-circuit voltage of 0.436 V, short-circuit current of 24.8 mA/cm(2), and fill factor of 0.682, giving a power conversion efficiency of 7.37% under AM1.5G illumination. The internal quantum efficiency of the device was higher than that of the world-record InP cell in the short wavelength range. (C) 2013 AIP Publishing LLC

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Indium Phosphide Core–Shell Nanowire Array Solar Cells with Lattice-Mismatched Window Layer

Cited by 47 publications

References 27 publications

Indium phosphide nanowires and their applications in optoelectronic devices

Indium phosphide nanowires and their applications in optoelectronic devices

A Comparative Study of Absorption in Vertically and Laterally Oriented InP Core–Shell Nanowire Photovoltaic Devices

Indium tin oxide and indium phosphide heterojunction nanowire array solar cells

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