Indium phosphide passivation using thin layers of cadmium sulfide

Abstract

The electrical properties of the silicon dioxide/n-type (100) InP interface were significantly improved by thin interlayers of chemical bath deposited CdS. The CdS layer and CdS/InP interface were investigated with x-ray photoelectron spectroscopy (XPS) and photoluminescence (PL). XPS data showed reduction of native oxides and the prevention of subsequent substrate oxide growth following CdS layer deposition. PL spectra, measured between 1.0 and 1.3 μm, indicate a reduction in phosphorus vacancies. Metal–insulator–semiconductor (MIS) capacitors fabricated with CdS-treated InP substrates displayed interface-state densities below 1×1011 eV−1 cm−2 when determined from the difference between the high- and low-frequency capacitance data.

Photoluminescence of InP: an in situ probe for characterizing nanostructured PbSe electrodeposited on InP

“…and its amplitude depends on the excitation wavelength [32,34,35]. This phenomenon is observed for InP-S and n-InP-hydrogen interactions giving rise to passivation effects [36][37][38].…”

Cadmium sulfide passivation of InGaAs/InP mesa p-i-n photodiodes

“…The inclusion of this final chemical treatment and anneal was found to produce more uniform electrical results in this and other works. [10][11][12][13][14] A similar recipe to the one presented here produced dramatic reductions in interface state trap density on InP based MIS structures as measured by high and low frequency CV techniques. [10][11][12][13] Sample D was prepared in an identical fashion to sample C with the addition of a 2000 Å SiO 2 capping layer deposited by lowtemperature CVD.…”

“…Another promising technique, sulfur passivation using chemical baths, was shown to be particularly effective in reducing surface states in III-V compounds in a variety of device types. [10][11][12][13][14] Although the use of (NH 4 ) 2 S and (NH 4 ) 2 S x chemical baths are cited most frequently in the literature, chemically deposited cadmium sulfide (CdS) has also been shown to improve device performance through the reduction of interface states in InP MIS diodes, 10 MIS capacitors, [11][12][13][14] MSM devices, 10 MISFETs, 13 Schottky contacts, 14 and HEMTs. 10 In this report, we present the results of applying the chemical bath deposition (CBD) CdS process of Ref.…”

Fundamental Study of InP-Based Open-Gate Field-Effect Transistors for Application to Liquid-Phase Chemical Sensors

“…In such a situation, the surface potential can only be slightly changed with the ion concentration in the electrolyte. Various approaches for reducing the interface states have been proposed for the InP, such as sulfur treatments [14][15][16] , application of a Si interface layer 17) , and electrochemical treatment 18,19) . For example, a large reduction in the interface states was achieved for the SiN x /InP interfaces by using a gaseous H 2 S treatment, which resulted in recovery of the potential controllability 15) .…”