Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes

Hardy, Matthew T.; Holder, Casey; Feezell, Daniel; Nakamura, Shuji; Speck, James S.; Cohen, Daniel; DenBaars, Steven P.

doi:10.1063/1.4819171

Cited by 49 publications

(22 citation statements)

References 19 publications

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“…Indium oxide (In 2 O 3 ) is a versatile wide band gap semiconductor [1] which finds applications in areas ranging from gas sensors [2] to optoelectronic devices such as solar cells or flat panel displays [3][4][5][6][7][8]. The optoelectronic applications arise mostly due to the use of tin-doped In 2 O 3 as an n-type transparent conductor, and a large body of research exists regarding both optical and transport properties of this material.…”

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confidence: 99%

Optical absorption driven by dynamical symmetry breaking in indium oxide

Morris

Monserrat

2018

Phys. Rev. B

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confidence: 99%

Optical absorption driven by dynamical symmetry breaking in indium oxide

Morris

Monserrat

2018

Phys. Rev. B

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“…18,19 Since most devices composed of GaN materials work in the ultraviolet or blue range, it is very important to enhance the light emission at short wavelengths. As mentioned above, Au is an excellent material for PL modulation of wide gap semiconductors and it can convert the useless defect radiation to useful exciton emission.…”

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confidence: 99%

Underlying mechanism of blue emission enhancement in Au decorated p-GaN film

Qin

Chang

et al. 2017

RSC Adv.

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Localized surface plasmons (LSPs) excited on metallic structures often play a significant role in mediating the photoluminescence (PL) of semiconductors. For p-GaN film, due to the LSP coupling, blue emission was enhanced while defect-related green emission was quenched to noise level after the decoration with Au nanoparticles (NPs). Why could the Au SP in the green light region enhance the blue and even ultraviolet emission? In this paper, a series of near/far-field spectral analyses and simulations were conducted to understand this process. A clear physical model of LSP-induced electron transfer was proposed to explain the defect-related LSP generation, coupling, electron transfer, and further blue emission increase with green emission reduction. Based on the PL measurement, an insulating SiO 2 layer was introduced to confirm the LSP-induced electron transfer between Au and GaN. Additional green light was introduced to observe the LSP-induced PL enhancement, in the same way as for samples with defects. Our study provides a full understanding of the mechanism of PL enhancement in Au decorated GaN and this model should be universal for similar metal/semiconductor systems.

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“…In the EEL reported in [6], the 0.55-µm-thick p-cladding consisted of a 0.3-µm-thick p-GaN layer followed by 0.25-µm-thick ITO layer. The p-GaN layer was located between the ITO layer and the InGaN p-waveguide.…”

Section: Eel Itomentioning

confidence: 99%

“…Currently, the most attractive approaches, already proven for blue EELs, involve the use of ITO (indium-tin-oxide) as a partial replacement for the p-GaN in EEL ITO p-claddings [3], using lattice-matched n-AlInN in AlInN EELs [4] or incorporating highly doped (plasmonic) n-GaN as a part of the n-claddings or substrate in GaN ++ EELs [5]. However, according to [6], it is sufficient to increase the thickness of the InGaN waveguides in blue EELs to achieve efficient confinement of the optical mode within its active region.…”

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confidence: 99%

Numerical Investigation of the Impact of ITO, AlInN, Plasmonic GaN and Top Gold Metalization on Semipolar Green EELs

et al. 2020

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In this paper, we present the results of a computational analysis of continuous-wave (CW) room-temperature (RT) semipolar InGaN/GaN edge-emitting lasers (EELs) operating in the green spectral region. In our calculations, we focused on the most promising materials and design solutions for the cladding layers, in terms of enhancing optical mode confinement. The structural modifications included optimization of top gold metalization, partial replacement of p-type GaN cladding layers with ITO and introducing low refractive index lattice-matched AlInN or plasmonic GaN regions. Based on our numerical findings, we show that by employing new material modifications to green EELs operating at around 540 nm it is possible to decrease their CW RT threshold current densities from over 11 kA/cm2 to less than 7 kA/cm2.

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Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes

Abstract: Articles you may be interested inTrue green semipolar InGaN-based laser diodes beyond critical thickness limits using limited area epitaxy

Cited by 49 publications

References 19 publications

Optical absorption driven by dynamical symmetry breaking in indium oxide

Optical absorption driven by dynamical symmetry breaking in indium oxide

Underlying mechanism of blue emission enhancement in Au decorated p-GaN film

Numerical Investigation of the Impact of ITO, AlInN, Plasmonic GaN and Top Gold Metalization on Semipolar Green EELs

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