Carbon-nanotube-based semiconducting inks offer great promise for a variety of applications including fl exible, transparent, and printed electronics and optics. A critical drawback of such inks has been the presence of metallic nanotubes, which causes high-mobility inks to suffer from poor on/off ratios, preventing their applications in a wide variety of commercial settings. Here, we report a comprehensive study of the relationship between mobility, density, and on/off ratios of solution-based, deposited semiconducting nanotube ink used as the channel in fi eld effect transistors. A comprehensive spectrum of the density starting from less than 10 tubes μ m − 2 to the high end of more than 100 tubes μ m − 2 have been investigated. These studies indicate a quantitative trend of decreasing on/off ratio with increasing density and mobility, starting with mobilities over 90 cm 2 V − 1 s − 1 (approaching that of p-type Si MOSFETs) but with on/off ratios ∼ 10, and ending with on/off ratios > 10 5 (appropriate for modern digital integrated circuits), but with mobilities ∼ 1 cm 2 V − 1 s − 1 . These studies provide the fi rst important roadmap for the tradeoffs between mobility and on-off ratio in nanotube based semiconducting inks.Single-walled carbon nanotube (SWNT) based semiconducting inks may have a wide variety of applications in printed electronics (such as inkjet printing, [ 1 ] role to role gravure, [ 2 ] and pad/screen printings [ 3 ] ) as well as offering the possibility of heterogeneous integration of different semiconductor technologies such as Si CMOS, III-V, and optical display technologies. Recent progress in purifi cation techniques [ 4 ] has lead to the prospect of all-semiconducting SWNT inks for unsurpassed performance in printed circuits.In general, it is known that the mobility of individual, pristine semiconducting nanotubes can be up to 10 000 cm 2 V − 1 s − 1 . [ 5 ] However, mobilities for random networks of carbon nanotubes has hovered until recently around the 1 cm 2 V − 1 s − 1 limit. [ 6 ] What sets the mobility of a random network of semiconducting nanotubes in relationship to individual nanotubes? Can the mobility be increased by increasing the density? How does this affect the on/off ratio and what are the physical processes that set limits on this scaling?The most obvious reason that networks have lower mobilties than individual nantoubes is that tube-tube crossings limit the current fl ow from source to drain if the channel length is longer than the nanotube length. Increasing the network density can increase the current (and hence potentially the mobility).However, the complexity of such a system, coupled with the presence of metallic nanotubes that can short-circuit the device if the density exceeds the percolation threshold, means that there is no general theory that explains quantitatively the relationship between mobility, density, and on/off ratio, so that phenomenological experimental approaches are necessary for progress in the fi eld.Although solution-based processing technique...