Induced stresses and structural changes in silicon wafers as a result of laser micro-machining

Amer, Mäher S.; Dosser, Larry R.; LeClair, Steven R.; Maguire, John F.

doi:10.1016/s0169-4332(01)01043-1

Cited by 50 publications

(37 citation statements)

References 20 publications

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“…The feature around 520 cm À1 corresponds to a longitudinal optical (LO) Si phonon peak. Amorphous silicon was not detected at the edge of the vias, which is contrary to recent results [5,6] where a different drilling process was used.…”

Section: Resultscontrasting

confidence: 99%

“…This compares favourably to the much larger stress of 1.4 GPa found recently in a study of vias fabricated using a different drilling process [5,6]. The stress values above 200 MPa were always isolated occurrences and similar vias with identical processing did not necessarily show stress values of similar magnitude.…”

Section: Resultssupporting

confidence: 81%

“…The number of laser pulses and the pulse energy dictate via depth, the beam size governs the via diameter while the overall drill rate is determined by the laser repetition rate and the speed at which individual vias can be addressed [4]. There are a number of studies which have been devoted to the investigation of stress and structural changes in semiconductors as a result of laser machining [4][5][6]. In this study, we utilized micro-Raman spectroscopy to measure induced stress and monitor structural changes in (1 0 0) single crystal silicon wafers as a result of laser drilling.…”

Section: Introductionmentioning

confidence: 99%

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Micro-Raman investigation of stress distribution in laser drilled via structures

Wasyluk

Adley

Perova

et al. 2009

Applied Surface Science

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Section: Resultscontrasting

confidence: 99%

Section: Resultssupporting

confidence: 81%

Section: Introductionmentioning

confidence: 99%

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Micro-Raman investigation of stress distribution in laser drilled via structures

Wasyluk

Adley

Perova

et al. 2009

Applied Surface Science

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“…Thus, the phonon deformation potentials proposed in [39] can be used for stress (σ) evaluation, finally giving the equation: σ ≈ -435 Δω, where Δω is in cm -1 and σ is in MPa. It is also possible to observe a Raman signal from hexagonal (Si-IV) and/or nanocrystalline silicon with a peak at 510 cm -1 and a broad peak at around 490 cm -1 caused by amorphous silicon (a-Si) [37,38].…”

Section: Micro-raman Characterizationmentioning

confidence: 99%

“…Figure 11 shows maps of the deviation from crystallinity dc, as defined above, for an interval (x1 to x2) of non-crystalline areas and the areas with high stress. In a study on nanosecond-laser ablation of silicon [37] it was found that the stressed and amorphized areas largely coincide; however, their micro-Raman map analysed the sample from the top and not the cross-section. Also, the measure for "level of amorphization" used in the study was the area under the a-Si peak at 480 cm -1 divided by the surface under the 480 cm -1 (a-Si), 510 cm -1 (hexagonal, Si-IV) and 520 cm -1 peaks.…”

Section: Micro-raman Characterizationmentioning

confidence: 99%

Picosecond laser ablation for silicon micro fuel cell fabrication

Scotti¹,

Trusheim²,

Kanninen³

et al. 2013

J. Micromech. Microeng.

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Abstract:We have investigated laser ablation as a microfabrication approach to produce micro fuel cells (MFCs) in silicon. Picosecond pulses (15 ps) at a wavelength of 355 nm are used to make all of the MFC structures. To assess the benefits and drawbacks of laser ablation, reference cells have been produced by deep reactive ion etching (DRIE) using matching geometries. Ablated and etched cells have been evaluated and compared side by side. Our conclusion is that picosecond laser ablation is very well suited for MFC fabrication. The ablated cells match or excel DRIE-microfabricated cells in terms of current and power densities. Ablated MFCs achieved 47.6 mW cm -2 of power density and 121 mA cm -2 current density.

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Microadditive Manufacturing Technologies of 3D Microelectromechanical Systems

2021

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Conventional microfabrication processes have been well established, but their capabilities are generally limited simple and 2D extruded geometries. Additive manufacturing allows the ability to manufacture true 3D complex geometries, rapid design for manufacturing, mass customization, materials savings, and high precision, which have triggered the increased interest in manufacturing microelectromechanical systems (MEMS). Herein, MEMS manufacturing's recent advancements, including both conventional and additive manufacturing technologies, their working principles, and practical capabilities are consolidated. The use of additive manufacturing in several MEMS areas such as in microelectronics, circuitry, microfluidics, lab on a chip, packaging, and structural MEMS is also discussed in detail. Furthermore, the potentials and limitations of additive manufacturing are investigated with regard to the MEMS requirements. Finally, the technology outlook and improvements are discussed. This study shows that additive manufacturing offers a promising future for the fabrication of MEMS, especially using high‐resolution techniques such as microstereolithography, materials jetting, and materials extrusion. In contrast, current challenges such as materials requirements, equipment innovation, fabricating of in vivo devices for biomedical applications, inherited defects and poor surface finish, adhesion to substrates, and productivity are areas that require further study to increase the uptake by the MEMS community.

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Induced stresses and structural changes in silicon wafers as a result of laser micro-machining

Cited by 50 publications

References 20 publications

Micro-Raman investigation of stress distribution in laser drilled via structures

Micro-Raman investigation of stress distribution in laser drilled via structures

Picosecond laser ablation for silicon micro fuel cell fabrication

Microadditive Manufacturing Technologies of 3D Microelectromechanical Systems

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