Inductively Coupled Plasma Etching of Bulk Titanium for MEMS Applications

Parker, E.R.; Thibeault, B.J.; Aimi, M.; Rao, Masaru P.; MacDonald, N.C.

doi:10.1149/1.2006647

Cited by 90 publications

(94 citation statements)

References 20 publications

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“…5 The Cl 2 flux was chosen in order to have acceptable etch rates for 20 to 50 nm thick Ti film. An increased amount of Cl 2 would have led to an increase of the Ti etch rate 3,10 and thus to a fast and uncontrolled etching procedure. The bias power has been decreased to the minimum in order to decrease the titanium etch rate as well as the resist etch rate and maintain a good selectivity.…”

Section: Fabrication Process a Titanium Dry Etchingmentioning

confidence: 99%

“…The graphic demonstrates that the titanium oxide has a strong influence over the etching and can act as a masking layer. 3 Indeed, when only the native oxide lies on top of the Ti film, the etching becomes effective before 20 s of process, while for the oxidized sample at least 35 s are necessary for the complete removal of the TiO 2 layer. When the titanium layer has been uncovered the etch rate reaches 200 nm/min for both samples.…”

Section: Fabrication Process a Titanium Dry Etchingmentioning

confidence: 99%

“…Titanium oxide (rutile) has peculiar physical properties 1 that have already been exploited since the sixties for the fabrication of passive devices, 2 while titanium (Ti) is a bulk material for the fabrication of microstructured devices such as microelectromechanical systems 3 or microbolometers. 4 To date, very few results have been reported on the fabrication of titanium/rutile nanostructured devices 5 although titanium/ rutile nanostructures have demonstrated their great potential for use in the fabrication of future nanoelectronic devices and circuits, 6 such as MEMRISTORS, 7 or single electron transistors (SETs).…”

Section: Introductionmentioning

confidence: 99%

“…8 The fabrication of titanium nanostructures less than 100 nm requires precise control of the resist pattern transfer in the metal through the etching process. Dry etching of titanium thin films involves fluorine and/or chlorine based chemistries 3,4,9,10 that lead to etch rates in the range of a lm/ min. However, Gilmartin et al 5 have developed a nanoscale Ti etch process using electron beam lithography (EBL), achieving 70 nm critical dimension (CD) structures.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Technology platform for the fabrication of titanium nanostructures

Ecoffey¹,

Guilmain²,

Morissette³

et al. 2011

Journal of Vacuum Science & Technology B, Nanotechnology an

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This paper presents two approaches for the fabrication of top-down titanium nanostructures. The first approach involves electron beam lithography followed by a tailored titanium plasma etching. The two main challenges of this process lie in the optimization of the negative tone Ma-N electroresist resolution and in the definition of a controlled titanium etching process for titanium patterns less than 20 nm thick and wide. The second proposed approach is a damascene process where the titanium nanostructures are buried in the oxide. Very shallow and narrow (20 nm Â 20 nm) trenches are first patterned in the oxide and nanostructures are obtained by planarization of an evaporated titanium film. The dimensions of the structures are defined by the electron beam lithography resolution and the etching recipe. The third dimension is given by the titanium or any other metal thickness and can be controlled down to few nanometers thanks to the planarization step.

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Section: Fabrication Process a Titanium Dry Etchingmentioning

confidence: 99%

Section: Fabrication Process a Titanium Dry Etchingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Technology platform for the fabrication of titanium nanostructures

Ecoffey¹,

Guilmain²,

Morissette³

et al. 2011

Journal of Vacuum Science & Technology B, Nanotechnology an

View full text Add to dashboard Cite

show abstract

“…Fluorine-containing gases, such as CF 4 , C 4 F 8 , and SF 6 , are most commonly used in dry etch processing. However, when these gases are used to etch these minor metals, reaction products are formed on the surface.…”

Section: Introductionmentioning

confidence: 99%

Thermal Reactive Ion Etching of Minor Metals with SF6 Plasma

2017

Sensors and Materials

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Keywords: thermal reactive ion etching, minor metal, SF 6 plasma, titaniumIn this study, thermally assisted reactive ion etching (TRIE) was evaluated by both experiments and simulations. TRIE employs a self-heated stage instead of the etching stage of a regular RIE apparatus. The self-heated stage was designed on the base of the simulation results, and its heating characteristics upon the application of radio frequency (RF) power were evaluated. The temperature of the stage increases rapidly within 10 min because of the low thermal capacitance of the stage. An etch rate of 0.6 μm/min and an etch selectivity of about 30 were achieved for titanium etching with SF 6 plasma. In addition, we also investigated the application of TRIE for various kinds of minor metals (Mo, Ta, Nb, and Ti alloy) for the first time and achieved higher etch rates and etch selectivities than those of regular reactive ion etching (RIE).

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Combined analysis methods for investigating titanium and nickel surface contamination after plasma deep etching

Ettouri

Tillocher

Lefaucheux

et al. 2021

Surface & Interface Analysis

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Plasma etching techniques can result in damage and contamination of materials, which, if not removed, can interfere with further processing. Therefore, characterisation of the etched surface is necessary to understand the basic mechanisms involved in the etching process and enable process control and cleaning procedures to be developed. A detailed investigation by means of the combined use of scanning electron microscopy coupled with energy‐dispersive X‐ray spectrometry (SEM/EDS), X‐ray photoelectron spectroscopy (XPS) and optical microscopy (OM) has been carried out on deep titanium trenches etched by plasma. This innovative approach has provided a further insight into the microchemical structure of the surface contamination layer on both the titanium and the nickel hard mask surfaces. The described experiments were conducted on 25 to 100‐μm wide trenches, first etched in bulk titanium by an optimised Cl2/SF6/O2‐based inductively coupled plasma process, through an electroplated nickel hard mask. The results allow to identify chlorine, fluorine and carbon as the main contaminating agents of the nickel mask and to associate three oxidation states around the etched trenches highlighting certain specific aspects related to the passivation mechanism. These observations reinforce the scientific relevance of the combined use of complementary optical and imaging analytical techniques.

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Inductively Coupled Plasma Etching of Bulk Titanium for MEMS Applications

Cited by 90 publications

References 20 publications

Technology platform for the fabrication of titanium nanostructures

Technology platform for the fabrication of titanium nanostructures

Thermal Reactive Ion Etching of Minor Metals with SF6 Plasma

Combined analysis methods for investigating titanium and nickel surface contamination after plasma deep etching

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