2008
DOI: 10.1016/j.jiec.2008.01.001
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Inductively coupled plasma reactive ion etching of titanium nitride thin films in a Cl2/Ar plasma

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Cited by 16 publications
(5 citation statements)
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“…Figure 2 reveals that as the flow rate of Cl 2 increases from 0 to 100 sccm, the etch rate of the IGTO thin film increases from 9 to 69 nm min −1 . This result indicates that the chemical reaction with Cl or Cl 2 radicals rather than the physical reaction with Ar ions is the primary etching mechanism in the etching of the IGTO thin film [21,22]. When the IGTO thin film is etched using Cl 2 /Ar mixed gas, the by-products generated on the surface of the IGTO thin film are a combination of Cl and metals such as InCl x , GaCl x , and SnCl x .…”
Section: Resultsmentioning
confidence: 98%
“…Figure 2 reveals that as the flow rate of Cl 2 increases from 0 to 100 sccm, the etch rate of the IGTO thin film increases from 9 to 69 nm min −1 . This result indicates that the chemical reaction with Cl or Cl 2 radicals rather than the physical reaction with Ar ions is the primary etching mechanism in the etching of the IGTO thin film [21,22]. When the IGTO thin film is etched using Cl 2 /Ar mixed gas, the by-products generated on the surface of the IGTO thin film are a combination of Cl and metals such as InCl x , GaCl x , and SnCl x .…”
Section: Resultsmentioning
confidence: 98%
“…12-15) as a gate material have been studied, focusing on selectivity over high-k dielectrics (e.g., HfO 2 ). Min et al 18 investigated etching of TiN in an Ar/Cl 2 ICP. The etching rate of both materials depended on the square root of ion energy (beyond a threshold energy), indicating ion-assisted etching.…”
Section: Introductionmentioning
confidence: 99%
“…1 Therefore, TiN has been widely applied as a hard coating material for tools and a new hard mask for etching of materials with low etch rate such as magnetic films and transition metals. 2,3 TiN is also often used in microelectronic devices as conductive diffusion barrier between Si and interconnection metals such as Al and Cu for multilevel metallization. [4][5][6][7][8] Also, TiN can act as antireflection layer in microelectronic fabrication.…”
Section: Introductionmentioning
confidence: 99%