2010
DOI: 10.1016/j.vacuum.2010.08.006
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Inductively coupled plasma reactive ion etching of titanium thin films using a Cl2/Ar gas

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Cited by 10 publications
(8 citation statements)
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“…Other studies have reported similar trends, whereby although the etch rate and anisotropy of the etched structures do increase with RF power, its impact is limited compared to effects of other parameters. 27,37 Moreover, the increase generally diminishes beyond a certain value. For example, Parker et al reported that the etch rate did not increase beyond 100 W because titanium etching is more dependent on chemical processes rather than ion sputtering.…”
Section: Resultsmentioning
confidence: 98%
See 1 more Smart Citation
“…Other studies have reported similar trends, whereby although the etch rate and anisotropy of the etched structures do increase with RF power, its impact is limited compared to effects of other parameters. 27,37 Moreover, the increase generally diminishes beyond a certain value. For example, Parker et al reported that the etch rate did not increase beyond 100 W because titanium etching is more dependent on chemical processes rather than ion sputtering.…”
Section: Resultsmentioning
confidence: 98%
“…Notably, several researchers have reported an increase in the etch rate with an increase in ICP power in masked etching of Ti 26,27,34,37,38 and even in maskless etching. 22 However, that is a difficult conclusion to make in this study due to the height of the structures and their dense distribution, which meant the floor of the substrate was not visible.…”
Section: Resultsmentioning
confidence: 99%
“…The first tests performed with process C are displayed in table 3. Parameters were adjusted with respect to parametric studies reported in [11,12,18].…”
Section: Etching Conditions With CL 2 /Ar Chemistry For Titaniummentioning
confidence: 99%
“…In [18], Xiao et al pointed out the optimum parameters in their experimental conditions. It concerned Ti thin films deposited by magnetron sputtering but this also applies to bulk titanium substrates since these conditions are close to those used by Zhao et al in [9,10].…”
Section: Etching Conditions With CL 2 /Ar Chemistry For Titaniummentioning
confidence: 99%
“…It has been demonstrated that a material surface processed at the micro-or nanolevel promotes cellular adhesiveness. [1][2][3] The widely common and most convenient methods of treating materials are etching processes; chemical etching 4,5) and electrochemical etching, 6,7) which are the so-called wet etching techniques, and ion beam processing 8,9) and reactive ion etching, 10,11) which are the so-called dry etching techniques. Many substrates can be created in a short time at a lowcost by wet etching, while a processing with a high aspect ratio is possible with a variety of choices for patterns and materials in dry etching.…”
Section: Introductionmentioning
confidence: 99%