Inelastic scattering in a monolayer graphene sheet: A weak-localization study

Ki, Dong–Keun; Jeong, Dongchan; Choi, Jaehyun; Lee, Hu-Jong; Park, Kee-Su

doi:10.1103/physrevb.78.125409

Cited by 128 publications

(124 citation statements)

References 26 publications

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“…This T -1 dependence indicates that the electron-electron scattering process is the dominant dephasing mechanism in sample A [74]. The intervalley scattering length (l i = (D i ) 1/2 and intravalley scattering length (l * = (D * ) 1/2 ) are ~ 100 nm and they are temperature independent, consistent with previous work [44,47,[73][74][75][76][77][78][79][80]. Having studied the weak-localization phenomenon at low B fields, we now concentrate on the zero B field conductivity data.…”

Section: Electron-electron Interaction In High Quality Epitaxial Grapsupporting

confidence: 76%

“…Consequently, a weaker T dependence for   ,   T -1/4 (or p = 1/4), is obtained. This weak T dependence for   (or l  ) has also been observed in graphene films with high 2DES density [44,76] and it suggests that de-coherence mechanisms other than e-e scattering may be important. The zero field temperature dependence for sample B (dots) is shown in Figure 30.…”

Section: Electron-electron Interaction In High Quality Epitaxial Grapmentioning

confidence: 81%

“…By T = 12.5 K, UCF almost disappears in this sample. WL in graphene has been reported in previous studies [44,47,[73][74][75][76][77][78][79][80] and is shown to be due to the quantum interference effect of impurity scattering [51]. Figure 28 .…”

Section: Electron-electron Interaction In High Quality Epitaxial Grapmentioning

confidence: 99%

See 2 more Smart Citations

Enabling graphene nanoelectronics.

Pan¹,

Ohta²,

Biedermann³

et al. 2011

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Recent work has shown that graphene, a 2D electronic material amenable to the planar semiconductor fabrication processing, possesses tunable electronic material properties potentially far superior to metals and other standard semiconductors. Despite its phenomenal electronic properties, focused research is still required to develop techniques for depositing and synthesizing graphene over large areas, thereby enabling the reproducible mass-fabrication of graphene-based devices. To address these issues, we combined an array of growth approaches and characterization resources to investigate several innovative and synergistic approaches for the synthesis of high quality graphene films on technologically relevant substrate (SiC and metals). Our work focused on developing the fundamental scientific understanding necessary to generate large-area graphene films that exhibit highly uniform electronic properties and record carrier mobility, as well as developing techniques to transfer graphene onto other substrates.4

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Section: Electron-electron Interaction In High Quality Epitaxial Grapsupporting

confidence: 76%

Section: Electron-electron Interaction In High Quality Epitaxial Grapmentioning

confidence: 81%

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Enabling graphene nanoelectronics.

Pan¹,

Ohta²,

Biedermann³

et al. 2011

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“…Such features are characteristic of so called WL, 38 and have been observed in many other graphitic systems. 2,32,[39][40][41][42][43][44] WL arises from the constructive quantum interference between time-reversed multiple-scattering trajectories ͑within a length scale L that the electron wave function is phase coherent͒ that enhances the probability of electron localization ͑and thus also the electrical resistance͒. Such a WL 5.…”

Section: -2mentioning

confidence: 99%

“…WL has received strong attention in recent studies of both exfoliated 32,[40][41][42][43] and epitaxially grown ͑on SiC͒ ͑Refs. 2 and 44͒ graphene systems.…”

Section: -4mentioning

confidence: 99%

Large-scale graphitic thin films synthesized on Ni and transferred to insulators: Structural and electronic properties

Cao

Colby

et al. 2010

Journal of Applied Physics

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We present a comprehensive study of the structural and electronic properties of ultrathin films containing graphene layers synthesized by chemical vapor deposition (CVD) based surface segregation on polycrystalline Ni foils then transferred onto insulating SiO 2 /Si substrates. Films of size up to several mm's have been synthesized. Structural characterizations by atomic force microscopy (AFM), scanning tunneling microscopy (STM), cross-sectional transmission electron microscopy (XTEM) and Raman spectroscopy confirm that such large scale graphitic thin films (GTF) contain both thick graphite regions and thin regions of few layer graphene. The films also contain many wrinkles, with sharply-bent tips and dislocations revealed by XTEM, yielding insights on the growth and buckling processes of the GTF. Measurements on mm-scale back-gated transistor devices fabricated from the transferred GTF show ambipolar field effect with resistance modulation ~50% and carrier mobilities reaching ~2000 cm 2 /Vs. We also demonstrate quantum transport of carriers with phase coherence length over 0.2 µm from the observation of 2D weak localization in low temperature magneto-transport measurements. Our results show that despite the non-uniformity and surface roughness, such largescale, flexible thin films can have electronic properties promising for device applications.

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Room‐Temperature Quantum Transport Signatures in Graphene/LaAlO₃/SrTiO₃ Heterostructures

et al. 2017

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2Weak localization (WL) and weak antilocalization (WAL) are quantum interference effects [1][2][3][4] resulting from electron phase coherence and spin-orbit interactions in 2-dimensional (2D) electron systems. WL results from constructive interference between pairs of time-reversed closed-loop electron trajectories and provides a positive correction to the Drude resistivity. [2, 4] Spin-orbit coupling (SOC) leads to suppressed backscattering due to destructive interference, leading to WAL and a negative correction to the Drude resistivity.[3]The intrinsic SOC of graphene is weak; [5] however, charge carriers in graphene possess a pseudospin degree of freedom, which arises from the degeneracy introduced by the two inequivalent atomic sites per unit cell in the graphene honeycomb lattice being comprised of A and B sublattices[ Figure 1(a) and (b)]. [6, 7] Recent discovery of unique quantum transport phenomena in graphene, such as unconventional half-integer quantum Hall effect [7, 8] and Klein tunneling [9][10][11] is a direct consequence of non-trivial Berry phase of ! induced by pseudospin rotation. Pseudospin in graphene can be utilized to store and manipulate information, which is analogous to the spin degree of freedom in spintronics. [12][13][14][15][16] Because of pseudospin rotation, each scattering process has a phase difference of ! between two time reversal pair in a closed quantum diffusive path. This results in destructive interference that suppresses backscattering, leading to WAL in graphene, which is analogous to the role of SOC (Figure 1(c) and (d)) in ordinary semiconductors. WAL is theoretically expected in graphene in the absence of inter-valley and chirality breaking scattering. [17] Most studies have not presented clear evidence of WAL via negative magnetoconductance, [18][19][20][21][22] most likely due to presence of point defects in graphene samples that locally break the sublattice degeneracy and smooth out !-phase contribution. Experimental signatures of WAL observed in high-quality epitaxial graphene samples are attributed to suppressed point defects.[23]Interestingly, a WL to WAL transition is achieved in high quality exfoliated samples [24] by decreasing the ratio of the dephasing length to the symmetry-breaking length via decoherence and carrier-density control. 3Preservation of pseudospin quantum interference up to room temperature (RT) is of fundamental importance for a variety of proposed applications, [12-16, 25, 26] but thermal perturbations typically suppress the phase coherence and hinder practical use of the devices. RT operation can be achieved if the high graphene mobility is consistently maintained over a broad temperature range and phonon-scattering contribution is significantly reduced. The mobility of graphene field-effect devices fabricated on SiO 2 /Si substrates is typically reduced at RT due to scattering with surface polar modes. [20,27,28] A significant improvement in quality was achieved by fabricating graphene devices on hexagonal-boron nitride (hBN) ...

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Inelastic scattering in a monolayer graphene sheet: A weak-localization study

Cited by 128 publications

References 26 publications

Enabling graphene nanoelectronics.

Enabling graphene nanoelectronics.

Large-scale graphitic thin films synthesized on Ni and transferred to insulators: Structural and electronic properties

Room‐Temperature Quantum Transport Signatures in Graphene/LaAlO₃/SrTiO₃ Heterostructures

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Inelastic scattering in a monolayer graphene sheet: A weak-localization study

Cited by 128 publications

References 26 publications

Enabling graphene nanoelectronics.

Enabling graphene nanoelectronics.

Large-scale graphitic thin films synthesized on Ni and transferred to insulators: Structural and electronic properties

Room‐Temperature Quantum Transport Signatures in Graphene/LaAlO3/SrTiO3 Heterostructures

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Product

Resources

About

Room‐Temperature Quantum Transport Signatures in Graphene/LaAlO₃/SrTiO₃ Heterostructures