Influence of a strontium-enriched intergranular cluster network on the electrical conductivity of In2O3-SrO ceramics

Samoilenko, Z. A.; Okunev, V. D.; Lewandowski, S.; Aleshkevych, P.; Nikolaenko, Yu. M.; Pushenko, E. I.; Abal'oshev, O.; Gierłowski, P.; Bondarchuk, A. N.; Glot, A.B.

doi:10.1134/s1063784213080215

Cited by 6 publications

(1 citation statement)

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“…A related notion of the "inter-crystalline network" has been used by the authors of Ref. [39] to explain properties of polycrystalline materials with x=10%. The third option is a formation on the surface of indium oxide grains of a thin tunnel-transparent or low conducting layer with a possible participation of the second phase.…”

Section: Discussion Of Resultsmentioning

confidence: 99%

Macro- and microscopic properties of strontium doped indium oxide

Nikolaenko

Kuzovlev

Medvedev

et al. 2014

Journal of Applied Physics

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Solid state synthesis and physical mechanisms of electrical conductivity variation in polycrystalline, strontium doped indium oxide In 2 O 3 :(SrO) x were investigated for materials with different doping levels at different temperatures (T=20-300 0 C) and ambient atmosphere content including humidity and low pressure. Gas sensing ability of these compounds as well as the sample resistance appeared to increase by 4 and 8 orders of the magnitude, respectively, with the doping level increase from zero up to x=10%. The conductance variation due to doping is explained by two mechanisms: acceptor-like electrical activity of Sr as a point defect and appearance of an additional phase of SrIn 2 O 4 . An unusual property of high level (x=10%) doped samples is a possibility of extraordinarily large and fast oxygen exchange with ambient atmosphere at not very high temperatures (100-200 0 C). This peculiarity is explained by friable structure of crystallite surface. Friable structure provides relatively fast transition of samples from high to low resistive state at the expense of high conductance of the near surface layer of the grains. Microscopic study of the electrodiffusion process at the surface of oxygen deficient samples allowed estimation of the diffusion coefficient of oxygen vacancies in the friable surface layer at room temperature as 3×10 -13 cm 2 /s, which is by one order of the magnitude smaller than that known for amorphous indium oxide films.

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Section: Discussion Of Resultsmentioning

confidence: 99%