2014
DOI: 10.1016/j.ceramint.2014.03.096
|View full text |Cite
|
Sign up to set email alerts
|

Effects of Zr dopant and sintering temperature on electrical properties of In2O3–SrO based ceramics

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2015
2015
2022
2022

Publication Types

Select...
3

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(1 citation statement)
references
References 13 publications
0
1
0
Order By: Relevance
“…24 It exists in either a cubic bixbyite-type IJc-In 2 O 3 ) phase (E g : 2.93 ± 0.15 eV) or a rh-In 2 O 3 phase (E g : 3.02 ± 0.15 eV). 25 For c-In 2 O 3 , various morphologies of c-In 2 O 3 nanostructures have been obtained using several approaches, including physical evaporation technique, 26 chemical vapor deposition, 27 thermal oxidation, 28 laser ablation technique, 29 sol-gel method, 30 and solution-phase growth. 31 However, compared with c-In 2 O 3 , a few studies on rh-In 2 O 3 nanostructures had been reported because the synthesis of rh-In 2 O 3 needed some extreme reaction conditions, such as high pressure or high temperature.…”
Section: Introductionmentioning
confidence: 99%
“…24 It exists in either a cubic bixbyite-type IJc-In 2 O 3 ) phase (E g : 2.93 ± 0.15 eV) or a rh-In 2 O 3 phase (E g : 3.02 ± 0.15 eV). 25 For c-In 2 O 3 , various morphologies of c-In 2 O 3 nanostructures have been obtained using several approaches, including physical evaporation technique, 26 chemical vapor deposition, 27 thermal oxidation, 28 laser ablation technique, 29 sol-gel method, 30 and solution-phase growth. 31 However, compared with c-In 2 O 3 , a few studies on rh-In 2 O 3 nanostructures had been reported because the synthesis of rh-In 2 O 3 needed some extreme reaction conditions, such as high pressure or high temperature.…”
Section: Introductionmentioning
confidence: 99%