Influence of a substrate, structure and annealing procedures on crystalline and optical properties of Si/SiO2 multiple quantum wells

Mchedlidze, Teimuraz; Arguirov, T.; Kouteva-Arguirova, S.; Jia, Guobin; Kittler, M.; Rölver, R.; Berghoff, B.; Först, Michael; Bätzner, D.L.; Spangenberg, Bernd

doi:10.1016/j.tsf.2007.12.083

Cited by 13 publications

(16 citation statements)

References 16 publications

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“…The PL intensity is generally larger, but there is the additional possibility of tunnelling between layers, and the interface between layers can degrade as the number of layers increases. [313][314][315][316] For either single QWs or superlattices, stress at the interface is a common feature. The stress is due to lattice mismatching at the interface (Sec.…”

Section: Quantum Wellsmentioning

confidence: 99%

Quantum confinement in Si and Ge nanostructures: Theory and experiment

Barbagiovanni

Lockwood

Simpson

et al. 2014

Applied Physics Reviews

200

132

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The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication methods in terms of both their structural and optical properties. Structural properties include interface states, defect states in a matrix material, and stress, all of which alter the electronic states and hence the measured optical properties. We demonstrate how variations in the fabrication method lead to differences in the NS properties, where the most relevant parameters for each type of fabrication method are highlighted. Si embedded in, or layered between, SiO 2 , and the role of the sub-oxide interface states embodies much of the discussion. Other matrix materials include Si 3 N 4 and Al 2 O 3. Si NSs exhibit a complicated optical spectrum, because the coupling between the interface states and the confined carriers manifests with varying magnitude depending on the dimension of confinement. Ge NSs do not produce well-defined luminescence due to confined carriers, because of the strong influence from oxygen vacancy defect states. Variations in Si and Ge NS properties are considered in terms of different theoretical models of QC (effective mass approximation, tight binding method, and pseudopotential method). For each theoretical model, we discuss the treatment of the relevant experimental parameters. V

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Section: Quantum Wellsmentioning

confidence: 99%

Quantum confinement in Si and Ge nanostructures: Theory and experiment

Barbagiovanni

Lockwood

Simpson

et al. 2014

Applied Physics Reviews

200

132

View full text Add to dashboard Cite

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“…Since ATR-FTIR measurement probes the very surface of samples, it is applicable to a variety of substrate materials. We note that the substrate material affects the property of Si nanostructures fabricated on it [7], so ATR-FTIR technique is also favorable in this sense. MQWs after crystallization of Si show clear PL emission as a result of quantum confinement.…”

Section: Resultsmentioning

confidence: 99%

High S/N crystallinity measurement and effective defect passivation in silicon nanostructures for third generation photovoltaics

Watanabe

Mine

Tsuchiya

et al. 2010

2010 35th IEEE Photovoltaic Specialists Conference

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For application of Si nanostructures to third generation photovoltaics, high S/N measurement of Si crystallinity and effective defect passivation method have been investigated. Here we use Si/SiO2 multiple quantum wells as an example of nanostructure, and show that attenuated total reflectance FTIR (ATR-FTIR) spectroscopy can be applied to detect crystallization of Si with high sensitivity based on the dependence of silicon-hydrogen absorbance peaks on Si crystal face. ATR-FTIR technique, which probes the very surface of samples, was found to be more sensitive to crystallization than Raman spectroscopy. We also show that high-temperature hydrogen annealing is an effective defect passivation method. In particular, the effectiveness of passivation of E' center in SiO2, which is essential to the solar cells involving tunneling through SiO2, was demonstrated.

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“…Note a shoulder of small intensity to the left of the sharp Si‐nc peak in the spectrum of the sample, which could be interpreted as a residual a‐Si or/and as a signal originating from a SiO x phase ( x < 2) formed during the process (see Ref. and references therein). The crystallinity obtained is much higher than that reported for a similar structure after furnace annealing ( F CR ∼ 74% ).…”

Section: Resultsmentioning

confidence: 99%

Light induced crystallization of an amorphous silicon film embedded between silicon oxide layers

Schade

Mchedlidze²,

Kittler

et al. 2013

Phys. Status Solidi B

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An amorphous Si (a-Si) film, 60 nm thick, embedded between SiO 2 layers and deposited on quartz substrate was crystallized in the regime of light-induced solid-phase crystallization (LISPC). The high quality of the film after LISPC was proved by high-resolution transmission electron microscopy (HRTEM), by Raman spectroscopy (RS) measurements, and by electron energy loss spectroscopy (EELS). The crystallized film consisted of fully crystalline grains with lateral sizes of 200-600 nm. Only a few stacking faults and/or dislocations were detected inside these grains. Besides the large grains, regions with fully crystalline material containing a higher density of lattice defects were also observed. An intermixing of phases, i.e., SiO 2 or a-Si clusters inside the crystallized Si film and/or Si-clysters inside the SiO 2 layers, was not detected.

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Influence of a substrate, structure and annealing procedures on crystalline and optical properties of Si/SiO2 multiple quantum wells

Cited by 13 publications

References 16 publications

Quantum confinement in Si and Ge nanostructures: Theory and experiment

Quantum confinement in Si and Ge nanostructures: Theory and experiment

High S/N crystallinity measurement and effective defect passivation in silicon nanostructures for third generation photovoltaics

Light induced crystallization of an amorphous silicon film embedded between silicon oxide layers

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