Light induced crystallization of an amorphous silicon film embedded between silicon oxide layers

Abstract

An amorphous Si (a-Si) film, 60 nm thick, embedded between SiO 2 layers and deposited on quartz substrate was crystallized in the regime of light-induced solid-phase crystallization (LISPC). The high quality of the film after LISPC was proved by high-resolution transmission electron microscopy (HRTEM), by Raman spectroscopy (RS) measurements, and by electron energy loss spectroscopy (EELS). The crystallized film consisted of fully crystalline grains with lateral sizes of 200-600 nm. Only a few stacking faults and/or dislocations were detected inside these grains. Besides the large grains, regions with fully crystalline material containing a higher density of lattice defects were also observed. An intermixing of phases, i.e., SiO 2 or a-Si clusters inside the crystallized Si film and/or Si-clysters inside the SiO 2 layers, was not detected.

Feasibility Study of Single-Crystal Si Island Manufacturing by Microscale Printing of Nanoparticles and Laser Crystallization

“…53,56,59 It is suggested that the size of a single crystal should be correlated with the sizes of laser beams as well as the pulse duration (scanning speed) used for recrystallization to increase the probability of forming a single crystal. 58 to confine the Si within a well-defined domain, 49,60 rather than a whole film; (ii) confining Si within a capillary 41,61 or isolating Si as a nanopillar; 53,56,59 and (iii) embedding or capping Si with a silicon oxide layer, 62,63 which also depresses the dewetting. 64−67 Generally, confinement provides an effective way to prevent heat dissipation, modulate cooling rate, and prevent dewetting of melted thin films.…”

“…Nanoscale single-crystal fabrication ,, has been demonstrated recently in confined domains on amorphous substrates both theoretically and experimentally. ,, It is suggested that the size of a single crystal should be correlated with the sizes of laser beams as well as the pulse duration (scanning speed) used for recrystallization to increase the probability of forming a single crystal . From previous literatures, three typical confining configurations were used: (i) Using prepatterning techniques to confine the Si within a well-defined domain, , rather than a whole film; (ii) confining Si within a capillary , or isolating Si as a nanopillar; ,, and (iii) embedding or capping Si with a silicon oxide layer, , which also depresses the dewetting. − Generally, confinement provides an effective way to prevent heat dissipation, modulate cooling rate, and prevent dewetting of melted thin films. However, a straightforward and reusable confining method is needed to simplify the process and lower the cost.…”