Influence of a ZnMnTe buffer layer on the growth of ZnTe on (001)GaAs by MOVPE

Magnetic studies on ZnTe:Cr film grown on glass substrate by thermal evaporation method

“…Studies on transition metal doped II-VI compound semiconductors is getting attraction, because transition metals have high solubility in this compound semiconductors than in III-V based compound semiconductors [6]. A lot of fundamental studies have been carried out on transition metal doped II-VI semiconductors such as CdTe [7,8] and ZnTe [9,10]. However, only a little application has been realized and this was because of spin glass or antiferromagnetism in these compound semiconductors [11].…”

Growth and characterization of ZnTe epilayers on (100) GaAs substrates by metalorganic vapor phase epitaxy

“…They have investigated on the growth mode behavior and surface morphology evolution during the early stages and have found that the ZnTe nucleation mode changes from an apparent 2D to a 3D growth mode within the first few monolayers, according to a Stranski-Krastanow growth mechanism for such material system. Zozime et al [15] have grown on (1 0 0) GaAs after depositing a ZnMnTe buffer layer and observed (1 1 1) ZnTe film orientation instead of the (1 0 0) orientation normally observed when ZnTe is directly grown on (1 0 0) GaAs. As compared with the homoepitaxial growth of ZnTe, however, the investigation of heteroepitaxial growth of ZnTe on GaAs is still in its infancy.…”

“…If ZnTe could be grown epitaxially on GaAs, device integration would be possible. Various growth techniques such as molecular beam epitaxy [9,10], hot wall epitaxy [11,12], pulsed laser ablation [13], and metalorganic vapor phase epitaxy (MOVPE) [14,15] have been explored. Longo et.al.…”

Substructural Properties and Anisotropic Peak Broadening in Zn1−x Mn x Te Films Determined by a Combined Methodology Based on SEM, HRTEM, XRD, and HRXRD

“…[8] Among other growth methods, films of this ternary compound are mostly obtained by pulsed laser deposition, [9] flash evaporation, [10] high-frequency magnetron scattering, [11] or metalorganic vapor phase epitaxy. [12] In METALLURGICAL AND MATERIALS TRANSACTIONS A this work, we have used the close-spaced vacuum sublimation (CSVS) technique for the growth of ZnMnTe films on glass substrates. This method has been selected due to its simplicity, cheapness, and capacity to grow films in conditions close to thermodynamical equilibrium.…”

“…This method has been selected due to its simplicity, cheapness, and capacity to grow films in conditions close to thermodynamical equilibrium. [13] In the current literature, we can find the study of some structural features of ZnMnTe films [9][10][11][12] but substructural characteristics have been poorly studied. In fact, there is still some controversial about, as some authors held the idea that there is little or no dislocation in submicron materials due to the invalid assumption associated with an infinite crystal, but others claim that the substructure of grains includes dislocation.…”