Influence of active afterheater on the fluid dynamics and heat transfer during Czochralski growth of oxide single crystals

Tavakoli, Mohammad Hossein; Omid, Shirin; Mohammadi-Manesh, Ebrahim

doi:10.1039/c1ce05056g

Cited by 13 publications

(4 citation statements)

References 32 publications

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“…Afterheaters have been used in the growth of oxide-based single crystals, such as sapphire, to control the temperature distribution on the growth surface and the cooling process of the post-growth crystal by creating the desired temperature distribution and heat flow in the induction furnace [14,22]. Recently, there have been experimental reports that the use of a properly dimensioned iridium afterheater in the EFG growth of gallium oxide greatly helps to optimize the process of gallium oxide single-crystal growth [23].…”

Section: Model Validation and Temperature Distribution In The Reactormentioning

confidence: 99%

Influence of Active Afterheater in the Crystal Growth of Gallium Oxide via Edge-Defined Film-Fed Growing Method

Jeong,

Choi,

Lim

et al. 2023

Crystals

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In this study, we explored the effect of an active afterheater on the growth of gallium oxide single crystals using the EFG method. We analyzed the temperature distribution of the crystal under the growing process through multiphysics simulations of the models with and without an active afterheater and investigated the morphology of crystals by applying each model to real experimental growths. The afterheater is a component in the growing furnace that activates radiant heat transfer, and its performance depends on its location, size, material, and shape. The simulation results showed that the afterheater applied in this study was found to be effective in obtaining good temperature distribution in the reactor. Through experimental crystal growth corresponding to the simulation approaches, it was confirmed that an appropriate afterheater reduces thermal stress at the growth front and provides a thermal annealing effect on the post-grown crystals during the growing process to improve crystal quality.

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Section: Model Validation and Temperature Distribution In The Reactormentioning

confidence: 99%

Influence of Active Afterheater in the Crystal Growth of Gallium Oxide via Edge-Defined Film-Fed Growing Method

Jeong,

Choi,

Lim

et al. 2023

Crystals

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“…q is the heat source parameter generated from electromagnetic induction by a highfrequency current which is calculated in the following. Assuming a uniform distribution of AC driving current density in the coil such as J d = J 0 cos(ωτ), using the Coulomb gauge in Maxwell's equations and by defining a function called the magnetic stream function (ψ B ), the wave equation in the cylindrical coordinate (r, z) can be written as: 17,18 (4)…”

Section: Governing Equationsmentioning

confidence: 99%

Global simulation of an RF Czochralski furnace during different stages of germanium single crystal growth

2016

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The mass and heat transfer in an inductively heated Czochralski crystal growth furnace during a crystal growth process is investigated numerically for a germanium semiconductor. The RF coil position is fixed at all growth stages. The results show that the temperature and velocity fields are changed, and the convexity of the crystal-melt interface increases with the grown crystal length. The temperature difference in the melt is about 50-60 K and the melt at the bottom of the crucible is crystallized.

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“…22 Besides that, the process of adjusting the thermal field, usually realized by trial and error, is costly and time-consuming. By using numerical simulation, 23 one can forecast the physical phenomena quickly and economically for various geometric and operating conditions. For example, optimized growth of sapphire crystals by the Kyropoulos method, 24 and of silicon crystals by the CZ method 25 has been realized through a numerical simulation method using the CGSim program developed by the STR group.…”

Section: Introductionmentioning

confidence: 99%

Growth of MgO doped near stoichiometric LiNbO3 single crystals by a hanging crucible Czochralski method using a ship lockage type powder feeding system assisted by numerical simulation

Yan

Leng

Yu³

et al. 2014

CrystEngComm

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MgO doped near stoichiometric LiNbO 3 (MgOSLN) crystals have great potential for use in periodically poled structured LiNbO 3 (PPLN) for doubling frequency lasers and optical parametric oscillation infrared lasers, because of their high optical damage threshold, single domain characteristics, and very low coercive field. However, few MgOSLN crystals are commercially available in the present market because of the great difficulty in growing them. This paper describes how a hanging crucible Czochralski technique with a newly-designed ship lockage type powder feeding system assisted by numerical simulation was developed for the successful growth of high quality near stoichiometric LiNbO 3 (SLN) and MgOSLN (~1 mol%) crystals. The physical properties of the crystals were assessed by measuring their crystallinity, Curie temperature, optical properties, coercive field and thermal properties. These properties, including a coercive field of 1.4 kV mm −1 and a thermal conductivity of 6.61 W (m K) −1 demonstrated that the crystals meet the demands for manufacturing periodically poled crystal devices. This growth method has great potential in the mass production of SLN and other incongruently melting crystals.

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Influence of active afterheater on the fluid dynamics and heat transfer during Czochralski growth of oxide single crystals

Cited by 13 publications

References 32 publications

Influence of Active Afterheater in the Crystal Growth of Gallium Oxide via Edge-Defined Film-Fed Growing Method

Influence of Active Afterheater in the Crystal Growth of Gallium Oxide via Edge-Defined Film-Fed Growing Method

Global simulation of an RF Czochralski furnace during different stages of germanium single crystal growth

Growth of MgO doped near stoichiometric LiNbO3 single crystals by a hanging crucible Czochralski method using a ship lockage type powder feeding system assisted by numerical simulation

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