Influence of additional insulation block on multi-crystalline silicon ingot growth process for PV applications

Nagarajan, S. G.; Sanmugavel, S.; Kesavan, V.; Aravindan, G.; Srinivasan, M.; Ramasamy, P.

doi:10.1016/j.jcrysgro.2019.03.017

Cited by 20 publications

(7 citation statements)

References 19 publications

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“…A lower growth rate is beneficial to suppress the formation of dislocation caused by thermal stress, but reduces production efficiency. [ 7 ] The V cr / G c refer to the ratio of growth rate ( V cr ) to crystal thermal gradient ( G c ) normal to the m–c interface, reflecting the formation of defect in silicon ingot. Figure shows the overall growth rate of G7 is larger than that of G6 due to increased crystal temperature gradient.…”

Section: Resultsmentioning

confidence: 99%

“…[ 6 ] The addition of different insulation blocks may obtain higher temperature gradient, higher growth rate, and slightly higher von Mises stress in the MC‐Si ingot. [ 7–9 ] The m–c interface by optimizing power ratio between top and side heaters can be improved. [ 10,11 ] Previous studies have analyzed the impact of different designed hot zones on the melt convection, m–c interface, growth rate, thermal stress, and so on, but they ignored the influence of heat dissipation and change of furnace size.…”

Section: Introductionmentioning

confidence: 99%

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Numerical Study of the Upgraded Hot Zone in Silicon Directional Solidification Process

Yang

et al. 2021

Crystal Research and Technology

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2D global transient model for generation‐six (G6) GT‐style furnace and upgraded generation‐seven (G7) ALD‐style furnace in which all types of heat transfer and flow are included is established to investigate the thermal field, melt convection, melt–crystal (m–c) interface shape, thermal stress, growth rate, and Voronkov ratios in the growing silicon ingot. The modeling is verified by the heater power and temperature experiment. Simulation results show that the melt flow is relatively stronger as the furnace upgrades. For G7, a relatively higher thermal stress and growth rate are found due to the higher temperature gradient both in the horizontal and axial directions. Furthermore, unlike the optimized G6, G7 shows the overly convex m–c interface in the initial stage and edge nucleation throughout crystal growth stage.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Numerical Study of the Upgraded Hot Zone in Silicon Directional Solidification Process

Yang

et al. 2021

Crystal Research and Technology

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“…However, time required to complete the simulation is less due to a small number of elements. Since we are looking for reliable results from simulations to compare with real-time experiments (and based on our previous experiences [3,17] ) we choose to use finer mesh. After that grids generated in all blocks to solve the heat conduction, convection and radiation problems.…”

Section: Numerical Modelmentioning

confidence: 99%

“…This investigation was done by simulation and they validate with experiment. [3] Nagarajan et al analyzed the fixed partition block on the DS furnace. This fixed partition block has lowered power consumption and resulted in convex melt-crystal interface shape and lower dislocation density on the ingot.…”

Section: Introductionmentioning

confidence: 99%

Numerical Investigation of Cone Shape Grooved DS Block to Improve the mc–Si Ingot Quality

Aravindan¹,

Manikam²,

Perumalsamy³

2021

Crystal Research and Technology

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Multicrystalline silicon solar cells occupy 62% in crystalline silicon solar cell production. It is grown by the directional solidification process. Solidification control has a vital role in directional solidification process. Cone shape groove is made in the directional solidification block to enhance the outgoing heat flux in the center region than the peripheral region. Five directional solidification furnaces are simulated for making a multicrystalline silicon ingot. First furnace is the conventional furnace, the second furnace has 30 mm × 85 mm groove block, the third furnace has 40 mm × 85 mm groove block, the fourth furnace has 50 mm × 85 mm groove block and the fifth furnace has 60 mm × 85 mm groove block. The von Mises stress in the maximum volume of the conventional and modified grown ingots are below the range of critical value. In conventional case 7% of the ingot volume is above critical stress value and in the modified cases 2.5% of the ingot volume is above critical stress value. If axial and radial temperature gradient is combined in the 50 mm × 85 mm groove block leads to better results.

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“…The design of the temperature eld of directional solidi cation in a furnace is mainly focused on structure and process optimization. The researches on structure optimization are mainly aimed at the heat insulation block near the side of crucible [11][12][13] , insulation cage at the side or bottom of the crucible [6,14,15] , the heaters [16] , quartz crucible [17][18][19] , and bottom grille [20] , etc. The researches on process optimization are mainly aimed at heater power [21,22] , the rate of the crucible movement [23] , etc.…”

Section: Introductionmentioning

confidence: 99%

Numerical Investigation on the Effect of Thermal Gate Moving Rate on Directional Solidification Process

Guan

et al. 2022

Silicon

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The temperature eld distribution during the growth of crystalline silicon by the directional solidi cation (DS) method is an important factor affecting the growth rate, the shape of the melt-crystal (m-c) interface, and thermal stress. To solve the problem of m-c interface convexity at the early stage of crystal growth caused by supercooling at the bottom center of silicon ingot during DS. In this paper, a two-dimensional global transient numerical model based on a large-size ALD-G7 (G7) crystalline silicon ingot furnace is established and experimentally veri ed. Based on the model, the in uence of different bottom thermal gate moving process curves on the convexity of the m-c interface at the early stage was studied, with emphasis on the changes in temperature eld, m-c interface, and thermal stress at the early stage of crystal growth. We have designed three cases, case 1 uses the original moving process curve of bottom thermal gate, case 2 and case 3 adjust the process curve to 0.95 and 0.9 of the original ratio, respectively.The numerical results show that the center cooling condition of silicon ingot and the convexity of the m-c interface are improved with the decreasing of thermal gate moving rate. Compared with case 1, the convexity of case 2 and case 3 is reduced by 55% and 44% on average, respectively.

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Influence of additional insulation block on multi-crystalline silicon ingot growth process for PV applications

Cited by 20 publications

References 19 publications

Numerical Study of the Upgraded Hot Zone in Silicon Directional Solidification Process

Numerical Study of the Upgraded Hot Zone in Silicon Directional Solidification Process

Numerical Investigation of Cone Shape Grooved DS Block to Improve the mc–Si Ingot Quality

Numerical Investigation on the Effect of Thermal Gate Moving Rate on Directional Solidification Process

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