2015
DOI: 10.1063/1.4915408
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Influence of Ag doping concentration on structural and optical properties of CdS thin film

Abstract: This work shows the influence of Ag concentration on structural properties of pulsed laser deposited nanocrystalline CdS thin film. X-ray photoelectron spectroscopy (XPS) studies confirm the dopant concentration in CdS films and atomic concentration of elements. XPS studies show that the samples are slightly sulfur deficient. GAXRD scan reveals the structural phase transformation from cubic to hexagonal phase of CdS without appearance of any phase of CdO, Ag 2 O or Ag 2 S suggesting the substitutional doping o… Show more

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Cited by 9 publications
(8 citation statements)
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“…The RTPL inherits an emission peak centered at ~ 630 nm with a small hump at ~ 605 nm for as grown nanocomposite both related to red emission (RE) without any sign of band edge emission. The similar feature is well visualized in TEM micrographs as discussed elsewhere in detail 28 BFTEM studies envisage the formation of almost mono-dispersed CdS nanoparticles of ~ 3 nm in SiO 2 matrix after annealing at 500 °C as shown in Fig.2. The other QDs (the majority), are either non-luminescent due to non-radiative processes, or luminescent at higher wavelength by recombination of the trapped charge carriers because in the strong confinement the only allowed transition is from singlet states and other transitions are forbidden 29 .…”
Section: Resultssupporting
confidence: 78%
“…The RTPL inherits an emission peak centered at ~ 630 nm with a small hump at ~ 605 nm for as grown nanocomposite both related to red emission (RE) without any sign of band edge emission. The similar feature is well visualized in TEM micrographs as discussed elsewhere in detail 28 BFTEM studies envisage the formation of almost mono-dispersed CdS nanoparticles of ~ 3 nm in SiO 2 matrix after annealing at 500 °C as shown in Fig.2. The other QDs (the majority), are either non-luminescent due to non-radiative processes, or luminescent at higher wavelength by recombination of the trapped charge carriers because in the strong confinement the only allowed transition is from singlet states and other transitions are forbidden 29 .…”
Section: Resultssupporting
confidence: 78%
“…SHII induced improvement in crystallinity i.e. growth of CdS/Cd 0.99 Ag 0.01 S nanoparticlesin SiO 2 is in accordance to previous reports[1,16,26,27]. It maybe due to SHII induced of particles due to annealing effects produced by ion beam, which results in an increase in the particle size[1, 16, 26] and SHI induced Ostwald ripening [1, 16, 26, 27] i.e.…”
supporting
confidence: 91%
“…All the samples show two emission peaks centered at ~ 2.34eV and 3.05 eV. The peak centered at ~2.34 eV is assigned for green emission (GE) due to transition of S-vacancy donors to the valence band and conduction band to S-interstitial[1,16,26]. PL spectra also indicate that Ag doping does not create any new trap levels between the conduction and valance band of CdS.…”
mentioning
confidence: 93%
“…Theoretical studies which mandate experimental outcomes of CdS are not developed. Doping transition metals with CdS have revealed interesting facts which further emphasizes its uses in most of recent technological applications [25][26][27]. Ristova et al have experimentally studied Ag doped CdS thin films system by chemical deposition through ion exchange process.…”
Section: Introductionmentioning
confidence: 99%