Intensity Modulated Radiotherapy (IMRT) is a modern type of external beam radiotherapy that conforms high radiation dose to the target with minimum dose to the organs at risk (OARs), making it an embellishment of every developed institution. The earlier publications didn't have much proofs of the clinical superiority of IMRT over other radiotherapy techniques. It was considered a complicated and expensive treatment technique but the advent of modern treatment and imaging modalities have made its rapid clinical implementation unquestionable. Now IMRT have grown up, it is not the technique in which non uniform beam intensities were generated just by metal compensators, now it has multileaf collimators (MLCs), rotational fan and cone beam delivery systems and robotic arm linear accelerators to cure the life threatening cancer diseases. IMRT with all its advances have some limitations including its high cost, increased staff work, increased time for its planning, and risks of marginal misses.

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We study electronic and optical properties of zincblende GaN doped with various Cr concentrations (3.12%, 6.25%, 9.37%). We conduct the calculations by employing DFT+U in Wien2K code while supercell size (1×2×2) is kept fixed for all cases. Electronic properties are changed with effect of dopant where 3d levels of dopant and 2p level of N produce p-d hybridization and this hybridization is highly affected by increasing impurity contents. Absorption spectra are blue shifted upon increase in dopant contents and absorption peaks are more pronounced in UV region. Refractive index and dielectric constant shows decrease as Cr concentration increases. Results reported in study indicate that Cr:GaN material may be considered a potential candidate for fabrication of optoelectronic, photonic and spintronic devices.

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