Influence of Ag on the energy spectrum of (Bi1-xSbx)2Te3

Kulbachinskii, V.A.; Kaminsky, A.Yu.; Lošťák, P.; Drašar, Č.

doi:10.1007/978-3-642-59484-7_23

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“…These parameters correspond to the anisotropy of the Fermi surface η = S max /S min = S b /S a = 3.8, which we consider independent of the composition of the various investigated samples. Such a value of anisotropy was recently confirmed experimentally in Sb 2 Te 3 [18].…”

Section: Calculation Of Hole Concentration and The Fermi Energy From ...supporting

confidence: 65%

“…The position of the energy jumps between Landau levels n − and (n + 1) + coincides with the resistivity maxima, between which the Hall plateaus are located in good agreement with the observations. This assumption is supported by the data on Ag-doped Sb 2 Te 3 [18] in which the dependence of S on (1/eR H ) 2/3 is linear up to the highest hole concentration (see figure 10) and hence there is no IB. Thus, it is necessary to dope many more tin atoms to make an IB in Sb 2 Te 3 as compared to Bi 2 Te 3 [10].…”

Section: Calculation Of Landau Levels and Of Positions Of Plateausmentioning

confidence: 59%

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Quantum oscillations of Hall resistance, magnetoresistance in a magnetic field up to 54 T and the energy spectrum of Sn doped layered semiconductors p-(Bi_1 xSb_x)₂Te₃

Kulbachinskii

Kaminsky

Lunin

et al. 2002

Semicond. Sci. Technol.

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The Hall effect and the Shubnikov-de Haas (SdH) effect have been investigated in magnetic fields up to 54 T in p-(Bi 1−x Sb x ) 2 Te 3 (0 x 1.0) Sn doped single crystals. Doping of (Bi 1−x Sb x ) 2 Te 3 with tin has shown that Sn exhibits acceptor properties in all crystals. We discuss the valence band structure of (Bi 1−x Sb x ) 2 Te 3 with the upper valence band (light hole band (LHB)), the lower valence band (heavy hole band (HHB)) and Sn-induced impurity band (IB). The Hall resistivity ρ H as a function of magnetic field shows quantization in the form of plateaus. The calculated Landau levels of the LHB with the best-fit parameters are in agreement with the experiment. The oscillation of ρ H is due to the presence of the carrier reservoir. The impurity resonant band with a high density of states or the HHB with a higher hole effective mass serve as the reservoir.

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Section: Calculation Of Hole Concentration and The Fermi Energy From ...supporting

confidence: 65%

Section: Calculation Of Landau Levels and Of Positions Of Plateausmentioning

confidence: 59%

Quantum oscillations of Hall resistance, magnetoresistance in a magnetic field up to 54 T and the energy spectrum of Sn doped layered semiconductors p-(Bi_1 xSb_x)₂Te₃

Kulbachinskii

Kaminsky

Lunin

et al. 2002

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

Influence of Ag on the energy spectrum of (Bi1-xSbx)2Te3

Cited by 1 publication

References 4 publications

Quantum oscillations of Hall resistance, magnetoresistance in a magnetic field up to 54 T and the energy spectrum of Sn doped layered semiconductors p-(Bi_1 xSb_x)₂Te₃

Quantum oscillations of Hall resistance, magnetoresistance in a magnetic field up to 54 T and the energy spectrum of Sn doped layered semiconductors p-(Bi_1 xSb_x)₂Te₃

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Influence of Ag on the energy spectrum of (Bi1-xSbx)2Te3

Cited by 1 publication

References 4 publications

Quantum oscillations of Hall resistance, magnetoresistance in a magnetic field up to 54 T and the energy spectrum of Sn doped layered semiconductors p-(Bi1 xSbx)2Te3

Quantum oscillations of Hall resistance, magnetoresistance in a magnetic field up to 54 T and the energy spectrum of Sn doped layered semiconductors p-(Bi1 xSbx)2Te3

Contact Info

Product

Resources

About

Quantum oscillations of Hall resistance, magnetoresistance in a magnetic field up to 54 T and the energy spectrum of Sn doped layered semiconductors p-(Bi_1 xSb_x)₂Te₃

Quantum oscillations of Hall resistance, magnetoresistance in a magnetic field up to 54 T and the energy spectrum of Sn doped layered semiconductors p-(Bi_1 xSb_x)₂Te₃