Quantum oscillations of Hall resistance, magnetoresistance in a magnetic field up to 54 T and the energy spectrum of Sn doped layered semiconductors p-(Bi_1 xSb_x)₂Te₃

Abstract

The Hall effect and the Shubnikov-de Haas (SdH) effect have been investigated in magnetic fields up to 54 T in p-(Bi 1−x Sb x ) 2 Te 3 (0 x 1.0) Sn doped single crystals. Doping of (Bi 1−x Sb x ) 2 Te 3 with tin has shown that Sn exhibits acceptor properties in all crystals. We discuss the valence band structure of (Bi 1−x Sb x ) 2 Te 3 with the upper valence band (light hole band (LHB)), the lower valence band (heavy hole band (HHB)) and Sn-induced impurity band (IB). The Hall resistivity ρ H as a function of magnetic field shows quantization in the form of plateaus. The calculated Landau levels of the LHB with the best-fit parameters are in agreement with the experiment. The oscillation of ρ H is due to the presence of the carrier reservoir. The impurity resonant band with a high density of states or the HHB with a higher hole effective mass serve as the reservoir.

Angular-dependences of giant in-plane and interlayer magnetoresistances in Bi2Te3 bulk single crystals

“…The Hall effect, Shubnikov-de Haas effect (SdH), and the thermoelectric effect have been investigated in Sb, Sn, Ag, and Ga doped Bi 2 Te 3 . 8,9 A many-valley model was applied to estimate several parameters, including the shape and orientation of the energy ellipsoids, as well as the density of carriers and the relaxation time. 10 The transverse MR effect (defined as (R B À R 0 /R 0 ) Â 100% with R B and R 0 the resistance with and without magnetic field, respectively) has also been studied in a Bi 2 Te 3 crystal annealed at 410 C. 11,12 The observed MR value at 1.8 K is 200% with a field of 9 T applied along the c-axis.…”

Influence of Sn on the thermoelectric properties of (BixSb1−x)2Te3 single crystals

“…As can be seen from Table 1, the Hall hole concentration increases after Sn doping. In order to determine the concentration of light holes and the Fermi energy, we also used the Shubnikov-de Haas (SdH) effect at T¼4.2 K in high magnetic fields [11,13]. Some parameters of samples according to the galvanomagnetic and SdH measurements are listed in Table 1.…”

“…[7][8][9][10][11][12][13]. Quantum oscillations of the Hall resistance in a magnetic filed up to 54 T and the energy spectrum of Sn doped layered semiconductors p-(B 1 À x Sb x ) 2 Te 3 have been studied in Ref.…”

“…Quantum oscillations of the Hall resistance in a magnetic filed up to 54 T and the energy spectrum of Sn doped layered semiconductors p-(B 1 À x Sb x ) 2 Te 3 have been studied in Ref. [11,13]. It is known that tin forms a resonant state 15 meV below the top of the upper valence band and increases the Seebeck coefficient S of single crystals of Bi 2 Te 3 [7][8][9][10].…”

Влияние Легирования Оловом, Таллием И Медью На Квантовые Подвижности Дырок В Монокристаллах Теллурида Сурьмы

“…Также было установлено, что легирование оловом теллурида висмута приводит к увеличению термоэдс, так как олово создает примесную зону и увеличивает плотность состояний на уровне Ферми [3,4]. В теллуриде сурьмы олово также проявляет акцепторные свойства [5,6]. Изучалось влияние легирования таллием на термоэлектрические свойства теллурида сурьмы (материал р-типа) [7].…”