Influence of Al dopant on structural and optical parameters of AgInSe2 thin film

Sobhi, S. N.; Hussein, Bushra H.

doi:10.15251/cl.2022.196.409

Cited by 4 publications

(5 citation statements)

References 25 publications

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“…This resulted due to the insulator's various effective thicknesses. The imaginary portion supports the role played by free carriers in absorption, as shown in figures 12(a) and (b) [64]. This work exhibits the dependency of the real and imaginary components of the dielectric constant on wavelength and gas ratios.…”

Section: Dielectric Constantsupporting

confidence: 79%

The effect of Ar:O₂ gas ratios on the structural and optical properties of RF sputter-deposited La₂O₃-doped ZnO thin films

Pilli,

Sowjanya,

Shariq

et al. 2023

Semicond. Sci. Technol.

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Due to their unique scintillation, phosphorescence, magnetic, and catalytic properties, rare earth oxide compounds have recently become one of the most in-demand materials used in different ways. The current study investigated the impact of Ar:O2 gas flow variation on the deposition of La2O3-doped zinc oxide thin films (TFs) on silicon dioxide (SiO2) substrates using the radio frequency sputtering technique. FE-SEM analysis has shown a smooth surface topology and purity of La2O3-doped ZnO TFs. X-ray diffraction analysis exhibited a single-phase hexagonal wurtzite-type structure in TFs. A UV–Vis–IR spectrophotometer examined the optical characteristics of ZnO and La2O3-doped ZnO TFs in 300–800 nm wavelength range. The bandgap of La2O3 doped ZnO TFs changed from 2.9 to 3.1 eV as argon and oxygen concentrations in (Ar:O2) gas flow changed. A variation in optical constants such as dielectric constants, refractive index, and extinction coefficient was observed when ZnO and La2O3-doped ZnO TFs were exposed to variable (Ar:O2) gas flow ratios. The photoluminescence analysis of ZnO and La2O3-doped ZnO TFs was performed at an excitation wavelength of 330 nm. Atomic force microscopy further revealed that La2O3 doping resulted in smoother surfaces and smaller grain sizes. This comprehensive study provides valuable insights into the relationship between doping, gas composition, and the optical and structural properties of ZnO TFs. The obtained results on the optimal flow rate of argon gas provide valuable insights for determining the appropriate deposition conditions of La2O3-doped ZnO TFs, specifically for their application in solar thermal systems.

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Section: Dielectric Constantsupporting

confidence: 79%

The effect of Ar:O₂ gas ratios on the structural and optical properties of RF sputter-deposited La₂O₃-doped ZnO thin films

Pilli,

Sowjanya,

Shariq

et al. 2023

Semicond. Sci. Technol.

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“…and the monoclinic phase's (200),(-112), ( 211), (-133), (-321),( 020) and ( 013) planes (JCPOS 01-081-1985). The XRD results demonstrated that, in comparison to pure Ag 2 Te, the peak intensity increases as aluminum doping concentration increases [14]. This demonstrates that an decrease in FWHM may result in an increase in the crystallization rate.…”

Section: Structural Propertiesmentioning

confidence: 83%

Ag2Te thin films' structural and optical characteristics as a result of Al doping

Ali,

Shihab

2023

JOR

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During the course of this investigation, Ag2Te and Al-doped Ag2Te films' structural and optical properties at various concentrations (1%, 1.5%) are examined. The thermal evaporation method was used to deposit 400-nm thick Ag2Te thin films on glass substrates at 100 °C. The structure is monoclinic of the polycrystalline films were revealed by (XRD). Between 1 and 1.5%, the activated precursor did not vary with respect to the favored direction. According to the XRD results, the mean crystal sizes ranged from 25.62 to 37.13 nm. The surface of the film is incredibly smooth, according to atomic force microscope study (AFM). The produced films' optical characteristics were investigated. optical absorption coefficient (α) of films were determined using the absorption spectra within the wavelength region (400-1000) nm. It was discovered that the optical energy gap allows direct transmission and that it narrows with doping.. AFM was used to measure the grain size and roughness, which change when impurities are added.

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“…Optical properties of thin film prepare, Tauc equation and lambert law have been used to determine the absorption coefficient α and the energy gap (Egopt) respectively from absorption spectrum [15,16] dielectric loss (tan δ) and optical conductivity (б) [17]:…”

Section: Methodsmentioning

confidence: 99%

Studying the effect of copper on the p-ZnTe/n-AgCuInSe2/p-Si for thin films solar cell applications

Athab¹,

Hussein²

2023

Self Cite

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A thin film of AgInSe2 and Ag1-xCuxInSe2 as well as n-Ag1-xCuxInSe2 /p-Si heterojunction with different Cu ratios (0, 0.1, 0.2) has been successfully fabricated by thermal evaporation method as absorbent layer with thickness about 700 nm and ZnTe as window layer with thickness about 100 nm. We made a multi-layer of p-ZnTe/n-AgCuInSe2/p-Si structures, In the present work, the conversion efficiency (η) increased when added the Cu and when used p-ZnTe as a window layer (WL) the bandgap energy of the direct transition decreases from 1.75 eV (Cu=0.0) to 1.48 eV (Cu=0.2 nm) and the bandgap energy for ZnTe=2.35 eV. The measurements of the electrical properties for prepared films showed that the D.C electrical conductivity (σd.c) increased with increasing Cu content for AgCuInSe2 thin films. So the electrical conductivity changed from 1 (Ω.cm)-1 to 29.96 (Ω.cm)-1 when x changed from 0.0 to 0.2. The prepared thin films have two activation energies (Ea1 & Ea2) in the temperature ranges of (300-393) K and (303-473) K. The C-V measurements revealed that all prepared heterojunctions were of the abrupt type and the junction capacitance reduced while the width of depletion region and the built-in potential increased with increasing the Cooper content. The current-voltage characteristics under dark condition of AgCuInSe2 heterojunctions, the current-voltage measurements under illumination showed that the performance of heterojunction solar cell improved with increasing Cu content. The result indicated that the prepared solar cell with 0.2 Ag content exhibited the highest efficiency (η = 1.68%) compared to other prepared solar cells.

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Influence of Al dopant on structural and optical parameters of AgInSe2 thin film

Cited by 4 publications

References 25 publications

The effect of Ar:O₂ gas ratios on the structural and optical properties of RF sputter-deposited La₂O₃-doped ZnO thin films

The effect of Ar:O₂ gas ratios on the structural and optical properties of RF sputter-deposited La₂O₃-doped ZnO thin films

Ag2Te thin films' structural and optical characteristics as a result of Al doping

Studying the effect of copper on the p-ZnTe/n-AgCuInSe2/p-Si for thin films solar cell applications

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Influence of Al dopant on structural and optical parameters of AgInSe2 thin film

Cited by 4 publications

References 25 publications

The effect of Ar:O2 gas ratios on the structural and optical properties of RF sputter-deposited La2O3-doped ZnO thin films

The effect of Ar:O2 gas ratios on the structural and optical properties of RF sputter-deposited La2O3-doped ZnO thin films

Ag2Te thin films' structural and optical characteristics as a result of Al doping

Studying the effect of copper on the p-ZnTe/n-AgCuInSe2/p-Si for thin films solar cell applications

Contact Info

Product

Resources

About

The effect of Ar:O₂ gas ratios on the structural and optical properties of RF sputter-deposited La₂O₃-doped ZnO thin films

The effect of Ar:O₂ gas ratios on the structural and optical properties of RF sputter-deposited La₂O₃-doped ZnO thin films