Influence of AlGaN back-barrier on irradiation tolerance of AlGaN/AlN/GaN HEMTs

Tang, Jinjin; Liu, Guipeng; Mao, Bangyao; Ali, Salamat; Zhao, Guijuan; Yang, Jianhong

doi:10.1016/j.physleta.2021.127527

Cited by 7 publications

(5 citation statements)

References 43 publications

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“…Different from AlGaN/GaN heterostructure, the InGaN channel provides better 2DEG confinement, which means that its wavefunctions can no longer be described by the standard FangÀHoward model. [20][21][22] To obtain the wavefunction ψ i ðzÞ in the i-th sub-band, coupled SchrödingerÀPoisson equations are solved consistently at the assumption of parabolic energy bands. [23][24][25] Then, to calculate 2DEG low-field mobility, intra-and intersub-band polar optical phonon (POP) scattering, DOI: 10.1002/pssr.202100573 Herein, the physical mechanism of the GaN interlayer for improving 2D electron gas (2DEG) mobility in the InGaN channel using an intersub-band scattering model is systematically elucidated.…”

Section: Intersub-band Scattering Modelmentioning

confidence: 99%

ψ_{i} (z)

in the i ‐th sub‐band, coupled Schrödinger−Poisson equations are solved consistently at the assumption of parabolic energy bands. [ 23–25 ] Then, to calculate 2DEG low‐field mobility, intra‐ and intersub‐band polar optical phonon (POP) scattering, piezoelectric potential scattering (PE), acoustic deformation potential (ADP) scattering, ionized impurities (IMP) scattering, dislocation scattering (DIS), and ADO are taken into account.…”

Section: Intersub‐band Scattering Modelmentioning

confidence: 99%

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Analysis of Improved 2D Electron Gas Mobility in InAlN/AlN/InGaN High‐Electron‐Mobility Transistors with GaN Interlayer

Tang

Liu

Mao

et al. 2022

Physica Rapid Research Ltrs

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Herein, the physical mechanism of the GaN interlayer for improving 2D electron gas (2DEG) mobility in the InGaN channel using an intersub‐band scattering model is systematically elucidated. The model takes into account various scattering mechanisms between the first four sub‐bands, in which the wavefunction of each sub‐band is obtained by self‐consistently solving 1D Schrödinger−Poisson equations. The total 2DEG mobility is obtained by averaging the sub‐band mobility by the percentage of electrons in the different sub‐bands. The effect of introducing different thicknesses of the GaN interlayer on the mobility limited by various scattering mechanisms is discussed in detail, especially polar optical phonon scattering and alloy disorder scattering. The calculated results are well supported by the reported experimental data, validating the correctness of the model.

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Section: Intersub-band Scattering Modelmentioning

confidence: 99%

ψ_{i} (z)

Section: Intersub‐band Scattering Modelmentioning

confidence: 99%

Analysis of Improved 2D Electron Gas Mobility in InAlN/AlN/InGaN High‐Electron‐Mobility Transistors with GaN Interlayer

Tang

Liu

Mao

et al. 2022

Physica Rapid Research Ltrs

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“…Pearton等 [14] 发现电子辐照会导致GaN HEMT二维电子气面密度和电子迁移率减小, 阈值电压正向漂移, 同时漏电流和跨导退化. Fleetwood [8] 发现沟道内缺陷及异质界面散射会诱导载流子数量变化, 引起HEMT器件1/f 噪声增大. Lin等 [15,16] 分析了电子质子辐照对AlGaAs/ GaAs HEMT二维电子气密度和电子迁移率的辐射影响规律和材料中引入的深能级缺陷, 发现外延结构和生长条件会影响HEMT二维电子气的抗辐照能力. Tang等 [5,17] 通过模拟仿真发现GaN HE MT异质结附近GaN层中的Ga空位会影响费米能级, 并且俘获势阱中二维电子气, 其中采用背部势垒层可以提高器件性能, 但会导致抗辐射性能降低. Zang等 [18] 质子辐照实验发现: 辐照诱导阈值电压漂移与隔离层厚度正相关, 隔离层厚度较薄会提高 GaN HEMT 抗辐射能力.…”

Section: 但是随着Hemt射频器件在空间环境中应unclassified

Structure parameters design of InP based high electron mobility transistor epitaxial materials to improve radiation-resistance ability

Zhou¹,

Ren-Feng²,

Yan-Feng³

et al. 2022

Acta Phys. Sin.

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In order to improve the radiation-resistance ability of the InP based high electron mobility transistor (InP HEMT) by optimizing the epitaxial structure design, a series of InP HEMT epitaxial structure materials with different structure parameters is grown by gas source molecular beam epitaxy. These samples are irradiated at room temperature by a 1.5-MeV electron beam at the same irradiation fluence of 2 × 10<sup>15</sup> cm<sup>–2</sup>. The electrical properties of the two-dimensional electron gas (2DEG) for InP HEMT epitaxial materials before and after irradiation are measured by Hall measurements to obtain the changes of the normalized 2DEG density and electron mobility along with the epitaxial structure parameters. The relation between 2DEG radiation damage and epitaxial structure parameters (such as Si-δ-doping density, spacer thickness, channel thickness and channel In content) of InP HEMT epitaxial structure materials is analyzed. The results show that the 2DEG of the InP HEMT epitaxial structure material with higher Si-δ-doping density, thinner spacer thickness, thicker channel thickness and lower channel In content has lower radiation damage, which possesses the stronger radiation-resistance ability.

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“…In particular, GaN-based high electron mobility transistors (HEMTs) are often used in highpower devices, and the massive heat often accompanies with the working devices. [6][7][8] Therefore, it is necessary to quantitatively study the thermal conductivity of GaN materials to improve the performance of GaN-based power electronic materials. [9,10] In the recent decades, there are plenty of works carried out experimentally and theoretically to study the thermal conductivity of GaN materials.…”

Section: Introductionmentioning

confidence: 99%

Molecular dynamics study on the dependence of thermal conductivity on size and strain in GaN nanofilms

Tang

Junkun²,

Zhang³

et al. 2023

Chinese Phys. B

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The thermal conductivity of GaN nanofilm is simulated by using the molecular dynamics (MD) method to explore the influence of the nanofilm thickness and the pre-strain field under different temperatures. It is demonstrated that the thermal conductivity of GaN nanofilm increases with the increase of nanofilm thickness, while decreases with the increase of temperature. Meanwhile, the thermal conductivity of strained GaN nanofilms is weakened with increasing the tensile strain. The film thickness and environment temperature can affect the strain effect on the thermal conductivity of GaN nanofilms. In addition, the analysis of phonon properties of GaN nanofilm showed that the phonon dispersion and density of states of GaN nanofilms can be significantly modified by the film thickness and strain. The results in this work can provide the theoretical supports for regulating the thermal properties of GaN nanofilm through tailoring the geometric size and strain engineering.

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Influence of AlGaN back-barrier on irradiation tolerance of AlGaN/AlN/GaN HEMTs

Cited by 7 publications

References 43 publications

Analysis of Improved 2D Electron Gas Mobility in InAlN/AlN/InGaN High‐Electron‐Mobility Transistors with GaN Interlayer

Analysis of Improved 2D Electron Gas Mobility in InAlN/AlN/InGaN High‐Electron‐Mobility Transistors with GaN Interlayer

Structure parameters design of InP based high electron mobility transistor epitaxial materials to improve radiation-resistance ability

Molecular dynamics study on the dependence of thermal conductivity on size and strain in GaN nanofilms

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