Influence of an electric field on self-diffraction of light waves in titanosillenite

Abstract

The influence of dislocation density on the I-V characteristics of InP diodes under reverse bias has been investigated. It is observed that the leakage current increases with increasing dislocation density whereas the breakdown voltage is reduced. Further, precipitates are observed on dislocations in t h e , p-regions formed by t h e in-diffusion of Cd into n-type InP layers. It is argued that the increase in leakage current is due to t h e presence of space charge cylinders around dislocations threading the p-n junction. On the other hand, precipitates may be responsible for premature avalanche breakdown. In addition, for the range in energy scanned, levels within the bandgap d u e to dislocations are not observed by photoluminescence measurements. Compounds (Inst. Phys. Conf. Ser. 17) p 119 decreases with increasing dislocation density, This effect [16] Eaves L, SIlli(k1 A w, Skolnick bf s alld Cuckayne B A232

Optical Absorption and Reflectivity of a Molecular Cluster of Lithium Niobate Adsorbed on a Graphene Layer

“…Among these, we can mention that it is an anisotropic, semiconductor, birefringent, photorefractive, colorless, photo elastic, ferroelectric, and piezoelectric material. Because of its properties, this compound is very appealing for many applications [1][2][3]. The photorefractive materials are used in many technological applications-such as holographic memories, phase conjugators, and dynamic holographic interferometry, among many more.…”

“…The photorefractive materials are used in many technological applications-such as holographic memories, phase conjugators, and dynamic holographic interferometry, among many more. Besides, in photorefractive crystals, an illumination configuration is converted into a refractive index pattern [1].…”

Running gratings in photoconductive materials

“…The study of the influence of photoinduced gratings modulation on electric current in semiconductors and ferroelectric materials was of a great deal of interest in the 1970s, [1][2][3] resulting in what later became known as the band transport model, or the standard photorefractive model (STPM), also known as photorefractive equations. 4 The idea was that photoinduced gratings generate holographic voltages or transient holographic currents in a broad class of photoconductive materials.…”

“…4 The idea was that photoinduced gratings generate holographic voltages or transient holographic currents in a broad class of photoconductive materials. [3][4][5][6] After a substantial period of academic research, the methods, based on transient photocurrent, are now in a device-building stage 7 with potential applications in vibrometry for nondestructive testing. Different types of space-charge waves become more pronounced under large-magnitude electric fields, leading to high-frequency current oscillations, such as the Gunn effect in GaAs, for which the free carriers form moving electric field domains.…”

“…Several examples include the application of STPM for description of a grating recording in the photorefractive polymers and liquid crystals, ferroelectric crystals, semiconductor materials, and paraelectric electro-optic crystals. [2][3][4][5] The main goal of this paper is to formulate a general form of the starting equations describing known and stillexpected results stemming from the STPM. Taking into account growing interest in the spatiotemporal patterns in different fields of modern science, we write the equations in appropriate three-dimensional (3-D) form.…”