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The influence of dislocation density on the I-V characteristics of InP diodes under reverse bias has been investigated. It is observed that the leakage current increases with increasing dislocation density whereas the breakdown voltage is reduced. Further, precipitates are observed on dislocations in t h e , p-regions formed by t h e in-diffusion of Cd into n-type InP layers. It is argued that the increase in leakage current is due to t h e presence of space charge cylinders around dislocations threading the p-n junction. On the other hand, precipitates may be responsible for premature avalanche breakdown. In addition, for the range in energy scanned, levels within the bandgap d u e to dislocations are not observed by photoluminescence measurements. Compounds (Inst. Phys. Conf. Ser. 17) p 119 decreases with increasing dislocation density, This effect [16] Eaves L, SIlli(k1 A w, Skolnick bf s alld Cuckayne B A232

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Brief review of our studies of the optical hysteresis and phase conjugation in the semicondutors, resonant media and electrooptic crystals is given together with some new results

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