Influence of an Impulse Current near a Photovoltaic Solar Module on Bypass Diode Characteristics

Fujimoto, Yudai; Nakamoto, Kenta; Nanno, Ikuo; Hamada, Toshiyuki; Ishikura, Norio; Oke, Shinichiro; Fujii, Masayuki; Oozeki, Takashi

doi:10.1109/icrera47325.2019.8996523

Cited by 4 publications

(3 citation statements)

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“…4 that v D is at first in forward bias for approximately 10 μs, and then transitions Although the transition of the bias direction appears in both cases of forward and reverse SLIV applications, the transition in the case of forward SLIV application is more significant, and has a strong relationship with diode damage. The transitions of v D and i D were reported in the case when an artificially high impulse current coupled electromagnetically with a bypass circuit [6] or submodule. Consequently, the transition of the bias direction mentioned above probably occurs under natural lightning strokes.…”

Section: Temporal Variations Of Diode Voltages and Currentsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…In addition to the thermal effect described above, some reports have demonstrated that an electromagnetic coupling between a high current flow of the nearby lightning stroke and a submodule induces a lightning surge, resulting in failure of BPDs [6–8]. Here, the term ‘submodule’ [1] indicates a closed‐loop circuit on a PV module, which includes one BPD connected in parallel to a number of photovoltaic cells connected in series.…”

Section: Introductionmentioning

confidence: 99%

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Voltage and Current Characteristics of Schottky Barrier Diodes and Rectifier Diodes Exposed to Standard Lightning Impulse Voltage

Ko,

Torihara,

Sakoda

et al. 2024

IEEJ Transactions Elec Engng

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Lightning surges are one of the major reasons of bypass diode (BPD) failure in photovoltaic modules. In this study, standard lightning impulse voltages (SLIVs) were directly applied to Schottky barrier diodes (SKB diodes) and rectifier diodes (PNJ diodes) with different electrical specifications. The critical voltages Vc of SLIV at which the diodes were damaged and the temporal variations of diode current (iD) and voltage (vD) were measured. It was found the iD‐vD characteristics can be categorized into a total of eight patterns: four patterns for the forward SLIV application and the four for the reverse SLIV application, regardless of diode types. The measured results imply that the irreversible voltage dip that occurs before the termination of the reverse breakdown contributes significantly to diode damage in the both forward and reverse SLIV applications. SKB diodes exposed to the reverse SLIV are easily damaged at the lowest magnitude of SLIV among all combinations of diode types and SLIV directions. Once a diode has been damaged due to the first SLIV application, the second application of SLIV to the same diode causes remarkable change in the iD‐vD characteristic even if the magnitude of the second SLIV is smaller than Vc. © 2024 Institute of Electrical Engineers of Japan. Published by Wiley Periodicals LLC.

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Section: Temporal Variations Of Diode Voltages and Currentsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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