Influence of an isovalent Cd impurity on photoluminescence of ZnSe crystals

Березовський, М. М.; Махний, В. П.; Sletov, M. M.

doi:10.1007/bf02606763

J Appl Spectrosc

1995

DOI: 10.1007/bf02606763

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Influence of an isovalent Cd impurity on photoluminescence of ZnSe crystals

М. М. Березовський¹,

В. П. Махний²,

M. M. Sletov³

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The Sources of Radiation in the Short-Wave Range on the Basis of Ii-Vi Heterolayers

Slyotov

2018

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The possibility of obtaining zinc selenide and zinc sulfide layers of hexagonal modification by isovalent substitution method is shown. They are characterized by intensive luminescence which is formed by the dominant annihilation of bound excitons for α-ZnSe and recombination on donor-acceptor pairs for α-ZnS. The resulting radiation covers the violet wavelength range. Quantum radiation efficiency reaches η = 10–12% for α-ZnSe and η = 5–8% for α-ZnS. The radiation is characterized by high temperature stability and repeatability of characteristics and parameters.

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The Sources of Radiation in the Short-Wave Range on the Basis of Ii-Vi Heterolayers

Slyotov

2018

IAPGOŚ

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Influence of an isovalent Cd impurity on photoluminescence of ZnSe crystals

Cited by 1 publication

References 1 publication

The Sources of Radiation in the Short-Wave Range on the Basis of Ii-Vi Heterolayers

The Sources of Radiation in the Short-Wave Range on the Basis of Ii-Vi Heterolayers

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