Influence of Annealing on the Optical Parameters of In2S3 Thin Films Produced by Thermal Evaporation

Izadneshan, Heydar; Gremenok, V. F.

doi:10.1007/s10812-014-9924-7

Cited by 6 publications

(3 citation statements)

References 13 publications

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“…The plots of (αhν) ½ vs hν indicate similar E g values as obtained by fitting absorption onsets. The (αhν) 2 plots showed good fits as well, except for In 2 S 3 , which has been shown to have both direct and indirect optical transitions, causing an indistinct absorption onset which is consistent with previous observations3132.…”

Section: Resultssupporting

confidence: 90%

Clean thermal decomposition of tertiary-alkyl metal thiolates to metal sulfides: environmentally-benign, non-polar inks for solution-processed chalcopyrite solar cells

Heo

Kim

Jeong

et al. 2016

Sci Rep

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We report the preparation of Cu2S, In2S3, CuInS2 and Cu(In,Ga)S2 semiconducting films via the spin coating and annealing of soluble tertiary-alkyl thiolate complexes. The thiolate compounds are readily prepared via the reaction of metal bases and tertiary-alkyl thiols. The thiolate complexes are soluble in common organic solvents and can be solution processed by spin coating to yield thin films. Upon thermal annealing in the range of 200–400 °C, the tertiary-alkyl thiolates decompose cleanly to yield volatile dialkyl sulfides and metal sulfide films which are free of organic residue. Analysis of the reaction byproducts strongly suggests that the decomposition proceeds via an SN1 mechanism. The composition of the films can be controlled by adjusting the amount of each metal thiolate used in the precursor solution yielding bandgaps in the range of 1.2 to 3.3 eV. The films form functioning p-n junctions when deposited in contact with CdS films prepared by the same method. Functioning solar cells are observed when such p-n junctions are prepared on transparent conducting substrates and finished by depositing electrodes with appropriate work functions. This method enables the fabrication of metal chalcogenide films on a large scale via a simple and chemically clear process.

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Section: Resultssupporting

confidence: 90%

Clean thermal decomposition of tertiary-alkyl metal thiolates to metal sulfides: environmentally-benign, non-polar inks for solution-processed chalcopyrite solar cells

Heo

Kim

Jeong

et al. 2016

Sci Rep

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show abstract

“…The constituent phases and structure of In 2 S 3 films were probed by Raman spectroscopy, with the positions of the observed prominent peaks (137.6, 163.3, 181.9, 246.9, 267.6, 304.4, 341.12, and 366.23 cm -1 (Fig. 4a)) being in close agreement with those previously obtained for tetragonal β-In 2 S 3 films (137, 164, 182, 247, 268, 309, 328, and 369 cm -1 ), 2,18,19 confirming that the prepared films comprised tetragonal β-In 2 S 3 . Prior studies reported that the direct and indirect bandgaps of β-In 2 S 3 films varied within the ranges of 1.9-2.75 and 1.98-2.2 eV, respectively.…”

supporting

confidence: 91%

Sulfurization-induced growth of single-crystalline high-mobility β-In2S3 films on InP

et al. 2017

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Metalorganic chemical vapor deposition was used to grow single-crystalline tetragonal β-In2S3 films on InP to afford covalently bonded In2S3/InP heterostructures, with the crystal structure of these films identified by high-resolution scanning transmission electron microscopy, X-ray diffraction, and Raman spectroscopy analyses, and the corresponding bandgap energies determined by photoluminescence measurements at room (300 K) and low temperatures (40 K). RT-PL measurements reveal the three peaks spectral emission at 464.3, 574.7, and 648.5 nm associated with luminescence from band-edge and two above conduction band-edge, respectively, although the LT-PL (40K) measurements of β-In2S3 film found two dominant peaks. Moreover, the above films exhibited n-type conductivity, with background electron concentration = 4.9 × 1015 cm–3, electron mobility = 1810.9 cm2 V–1 s–1, and resistivity = 0.704 Ω cm. Thus, single-crystalline β-In2S3 films deposited on InP are promising constituents of high-performance next-generation electronic, optoelectronic, and photovoltaic devices.

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“…The In 2 S 3 thin films can be prepared using a number of physical and chemical deposition techniques such as atomic layer deposition, chemical bath deposition, magnetron sputtering, thermal evaporation, close-spaced evaporation, spray pyrolysis, ion layer gas reaction, modulated flux deposition and wet chemical method etc [14][15][16][17][18][19][20][21][22]. Among these techniques, thermal vacuum evaporation is one of the most promising deposition technique and has a number of advantages like most productive, very high deposition rate, low material consumption and low cost of operation.…”

Section: Introductionmentioning

confidence: 99%

Effect of thermal annealing on physical properties of vacuum evaporated In2S3 buffer layer for eco-friendly photovoltaic applications

Nehra

Chander

Sharma

et al. 2015

Materials Science in Semiconductor Processing

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Influence of Annealing on the Optical Parameters of In2S3 Thin Films Produced by Thermal Evaporation

Cited by 6 publications

References 13 publications

Clean thermal decomposition of tertiary-alkyl metal thiolates to metal sulfides: environmentally-benign, non-polar inks for solution-processed chalcopyrite solar cells

Clean thermal decomposition of tertiary-alkyl metal thiolates to metal sulfides: environmentally-benign, non-polar inks for solution-processed chalcopyrite solar cells

Sulfurization-induced growth of single-crystalline high-mobility β-In2S3 films on InP

Effect of thermal annealing on physical properties of vacuum evaporated In2S3 buffer layer for eco-friendly photovoltaic applications

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