2016) Effect of rapid magnetic field annealing in vacuum on the structure and magnetic properties of Ni-P films, Integrated Ferroelectrics, 170:1, 33-42, ABSTRACT Ni-P thin films are deposited on silicon wafer by electroless method and treated by different annealing processes. The structure of as-deposited film exhibits the mixture of amorphous and microcrystalline phases, and the M s is 150 emu/cc and H c is 24 Oe. Rapid thermal annealing (RTA) could avoids the impurity and the M s of the sample reached the maximum value about 413 emu/cc after RTA process at 350°C. A magnetic field about 5000 Oe was applied during RTA process, which resulted in higher crystallization temperature, higher value of M s and lower value of H c .