Abstract:Nb2O5 nanostructures were successfully deposited by a Pulsed Laser Deposition technique (PLD) onto quartz substrates. The effects of annealing temperature on the optical morphological and structural properties deposited nano-thin films were investigated. The X-ray diffraction (XRD) results indicated the formation of the monoclinic crystalline structure, with a preferential orientation at the (301) direction. The optical energy band gap found to increase from 2.9 to 3.3 eV.
“…The root mean square also decreases from 91.61 to 28.14 nm. Increasing the Ag decoration levels leads to a decreasing in the root mean square to reach a minimum value of 28.14 nm at 45 s. According to this result, the reduction in the surface roughness in the Ag decoration levels may be attributed to the decrease of LiNbO 3 grain size, which was discussed previously, and this result is in a good agreement with 27 . Figure 7 AFM images of ( a ) pure LN, Ag-decorated LN at ( b ) 5 s, ( c ) 15 s, ( d ) 25 s, ( e ) 35 s and ( f ) 45 s. …”
Section: Resultssupporting
confidence: 89%
“…The successful integration of LiNbO 3 into optoelectronic components and devices includes fiber-based communication, wireless communication, and micro-electromechanical systems (MEMS) 15,16 . Hence, researchers have paid a particular attention to the synthesis of LiNbO 3 through different techniques, such as combustion methods 17 , sol-gel, hydrothermal [18][19][20] , wet chemical methods 21 , molten salt methods 22,23 , surfactant assisted solution-phase methods 24 , pulsed laser deposition (PLD) and pulse laser ablation (PLA) [25][26][27][28][29] , as well as the chemical hydrothermal technique and CBD 30,31 . The LN films on Si semiconductors are particularly desirable for the development and production of integrated ferroelectric, photonic, and sensing devices due to their combination of exceptional features.…”
Lithium niobite (LiNbO3) nanostructure were successfully synthesized by chemical bath deposition method (CBD) and then decorated with silver nitrate (AgNO3) through UV activation method at different immersion durations (5, 15, 25, 35, and 45 s). The silver nanoparticles (AgNPs) effects on the optical and structural properties were studied and analyzed using various scientific devices and technique. X-ray diffraction (XRD) results showed that all the samples have a hexagonal structure with a maximum diffraction peak at the (012), and the existence of silver atoms could be recognized at 2θ = 38.2° which corresponds to the (111) diffraction plane. The optical absorption of nanocomposites depicted the presence of plasma peak related to silver (Ag) at 350 nm. The estimated energy gap from the optical absorption revealed a reduction in the Eg value from (3.97 eV) to (3.59 eV) with the presence of Ag atom. The Photolumincence (PL) peaks were observed at around 355 nm for pure LiNbO3/Si and 358, 360, 363, 371, 476 nm for different immersion durations respectively, in the visible region of the electromagnetic spectrum. The scanning electron microscopy (SEM) study illustrated that with increasing the immersion time, especially at 45 s, a change in the particle morphology was observed (LiNbO3 NRs structure). Atomic force microscopy (AFM) displayed that the surface roughness decreases from 80.71 nm for pure sample to 23.02 nm for the decorated sample as the immersion time is increased. FT-IR manifested a noticeable increase in the intensity of the peaks of samples decorated with AgNPs. Raman spectroscopy elucidated that the peaks shifted to higher intensity due to the plasmonic effect of Ag nanoparticles. Ag–LiNbO3/Si heterojunction nano-devices were fabricated successfully and enhanced the optoelectronic properties in comparison with the pure LiNbO3/Si heterojunction device.
“…The root mean square also decreases from 91.61 to 28.14 nm. Increasing the Ag decoration levels leads to a decreasing in the root mean square to reach a minimum value of 28.14 nm at 45 s. According to this result, the reduction in the surface roughness in the Ag decoration levels may be attributed to the decrease of LiNbO 3 grain size, which was discussed previously, and this result is in a good agreement with 27 . Figure 7 AFM images of ( a ) pure LN, Ag-decorated LN at ( b ) 5 s, ( c ) 15 s, ( d ) 25 s, ( e ) 35 s and ( f ) 45 s. …”
Section: Resultssupporting
confidence: 89%
“…The successful integration of LiNbO 3 into optoelectronic components and devices includes fiber-based communication, wireless communication, and micro-electromechanical systems (MEMS) 15,16 . Hence, researchers have paid a particular attention to the synthesis of LiNbO 3 through different techniques, such as combustion methods 17 , sol-gel, hydrothermal [18][19][20] , wet chemical methods 21 , molten salt methods 22,23 , surfactant assisted solution-phase methods 24 , pulsed laser deposition (PLD) and pulse laser ablation (PLA) [25][26][27][28][29] , as well as the chemical hydrothermal technique and CBD 30,31 . The LN films on Si semiconductors are particularly desirable for the development and production of integrated ferroelectric, photonic, and sensing devices due to their combination of exceptional features.…”
Lithium niobite (LiNbO3) nanostructure were successfully synthesized by chemical bath deposition method (CBD) and then decorated with silver nitrate (AgNO3) through UV activation method at different immersion durations (5, 15, 25, 35, and 45 s). The silver nanoparticles (AgNPs) effects on the optical and structural properties were studied and analyzed using various scientific devices and technique. X-ray diffraction (XRD) results showed that all the samples have a hexagonal structure with a maximum diffraction peak at the (012), and the existence of silver atoms could be recognized at 2θ = 38.2° which corresponds to the (111) diffraction plane. The optical absorption of nanocomposites depicted the presence of plasma peak related to silver (Ag) at 350 nm. The estimated energy gap from the optical absorption revealed a reduction in the Eg value from (3.97 eV) to (3.59 eV) with the presence of Ag atom. The Photolumincence (PL) peaks were observed at around 355 nm for pure LiNbO3/Si and 358, 360, 363, 371, 476 nm for different immersion durations respectively, in the visible region of the electromagnetic spectrum. The scanning electron microscopy (SEM) study illustrated that with increasing the immersion time, especially at 45 s, a change in the particle morphology was observed (LiNbO3 NRs structure). Atomic force microscopy (AFM) displayed that the surface roughness decreases from 80.71 nm for pure sample to 23.02 nm for the decorated sample as the immersion time is increased. FT-IR manifested a noticeable increase in the intensity of the peaks of samples decorated with AgNPs. Raman spectroscopy elucidated that the peaks shifted to higher intensity due to the plasmonic effect of Ag nanoparticles. Ag–LiNbO3/Si heterojunction nano-devices were fabricated successfully and enhanced the optoelectronic properties in comparison with the pure LiNbO3/Si heterojunction device.
“…The molecular vibrations caused a broadening in the appearing bands' widths. In addition, the phonon confinement [25] phenomenon explains the relation between the particle size (ΔX) and the phonon momentum (ΔP) that are based Heisenberg uncertainty principle as in the following equation [26][27][28][29][30]:…”
Section: Q-switched Nd:yag Pulsed Laser: Second Harmonic Wavelength I...mentioning
“…Nb2O5 thin film physicochemical properties have strongly dependent on deposition methods and process conditions. Up to now, there are various methods for the preparation of Nb2O5 thin film, such as, magnetron sputtering [5], atomic layer deposition [6] electron beam deposited [7], pulsed laser deposition [8] spray deposition [9], sol-gel method [10]. Because of relatively low cost, large deposition area, low temperature processing and easy composition control, the sol-gel method has some advantages.…”
Nb2O5 thin films were deposited through sol-gel technique and then the films were annealed at temperature 300, 400, 500 and 600°C. The effect of annealing temperatures on the physical properties of the films was analyzed by several characterization techniques. Secondary ion mass spectroscopy analysis results indicated that uniform Nb and O distribution have formed throughout depth of the films deposited on substrates. The Atomic Force Microscope results observed that the increased temperature has resulted in increasing the surface roughness from 1.07 to 4.58 nm. The energy band gap (3.67–3.51 eV) was determined to be decrease with increase the annealing temperature. Therefore, considering the results of the both as-deposited at 150 ˚C and annealed films, it is clearly seen that as-deposited at 150 ˚C film has most uniform depth, a homogeneous surface and the highest optical band gap (at UV-A region). Therefore, the Al/Nb2O5 Schottky diode was fabricated based on the as-deposited film. The current-voltage (I-V) characteristics of the diode were measured at room temperature and detail discussed. It has been observed that the diode has exhibited good rectifying behavior. The obtained experimental results showed that the as deposited Nb2O5 thin film can be used in UV-A electro-optical applications.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
