Influence of arsenic flux on the annealing properties of GaInNAs quantum wells for long wavelength laser applications around 1.6μm

Bisping, D.; Pucicki, D.; Fischer, M.; Höfling, Sven; Forchel, A.

doi:10.1016/j.jcrysgro.2008.09.206

Cited by 9 publications

(7 citation statements)

References 15 publications

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“…[1][2][3] In particular, the presence of a small amount of nitrogen in the In x Ga 1−x As alloy causes a dramatic redshift of the host material band gap and an increased insensitivity of the band gap energy to temperature T. 4 However, fabrication of high-quality Ga 1−x In x N y As 1−ybased 1.55-μm devices remains a difficult task due to a large miscibility gap, which in turn results in an increased tendency for phase separation and strong carrier localization. 5,6 In the present work we use magneto-photoluminescence (magneto-PL) to study carrier localization in two contrasting samples: one grown at an elevated temperature and without lattice matching between the QWs and the barrier material, and one with optimized growth temperature and sample morphology.…”

Section: Introductionmentioning

confidence: 99%

Charge separation and temperature-induced carrier migration in Ga1−xInxN
Nuytten
¹
,
Hayne
²
,
Bansal
³

et al. 2011
Phys. Rev. B

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We have investigated the photoluminescence (PL) of two carefully selected dilute nitride Ga 1−x In x N y As 1−y multiple quantum well structures in magnetic fields up to 50 T as a function of temperature and excitation power. The observation of a nonmonotonic dependence of the PL energy on temperature indicates that localized states dominate the luminescence at low temperature, while magneto-PL experiments give new insights into the nature of the localization. We find that the low-temperature spatial distribution of carriers in the quantum well is different for electrons and holes because they are captured by different disorder-induced complexes that are spatially separated. A study of the thermalization of the carriers toward free states leads to the determination of the free-exciton wave-function extent in these systems and enables an assessment of the localization potentials induced by inhomogeneity in the quantum well.

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Section: Introductionmentioning

confidence: 99%

Charge separation and temperature-induced carrier migration in Ga1−xInxN
Nuytten
¹
,
Hayne
²
,
Bansal
³

et al. 2011
Phys. Rev. B

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“…The unusual influence of nitrogen on the electronic band structure of GaInNAs alloys, essentially the large band gap reduction [6,7] results in a wide range of applications of such material. Over the last few years, the growth of GaInNAs alloys has been demonstrated by both metalorganic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE), and significant improvement of GaInNAs optical and structural quality was achieved [4,5,8]. Moreover, these alloys can ensure the possibility of matching to several substrates (e.g.…”

Section: Introductionmentioning

confidence: 99%

“…In addition, more complex alloys, like GaInNAsSb, are also considered for longer emission and devices improvement [9,10]. However, the increase of N content in GaInNAs epitaxial layers requires much lower growth temperatures and significantly higher concentrations of the nitrogen source material in epitaxial reactors [8,11]. Such growth conditions cause strong degradation of their optical properties [12,13].…”

Section: Introductionmentioning

confidence: 99%

Inhomogeneous GaInNAs quantum wells: their properties and utilization for improving of p-i-n and p-n junction photodetectors

Pucicki

2017

Materials Science-Poland

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A theoretical study of electronic structures and optical properties of GaInNAs/GaAs quantum wells has been performed. The inhomogeneous distributions of indium and nitrogen atoms along the growth direction were discussed as the main factors having significant impact on the QWs absorption efficiency. The study was performed by applying the band anticrossing model combined with the envelope function formalism and based on the material parameters which can be found in the literature. Indeed, the electronic band structure of 15 nm thick uniform Ga 0.7 In 0.3 N 0.02 As 0.98 /GaAs QW was computed together with electronic structures of several types of inhomogeneous QWs, with the same total content of In and N atoms. It was found that presented inhomogeneities lead to significant quantum wells potential modifications and thus to spatial separation of the electrons and holes wave functions. On the other hand, these changes have a significant impact on the absorption coefficient behavior. This influence has been studied on the basis of simulated photoreflectance spectra, which probe the absorption transitions between QW energy subbands. The electronic structure of inhomogeneous QWs under the influence of electric field has also been studied. Two different senses of electric field vector (of p-i-n and n-i-p junctions) have been considered and thus, the improvement of such types of QWs-photodetectors based on inhomogeneous GaInNAs QWs has been proposed.

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“…To this end, GaAs-based GaInNAsSb is an attractive material because nitrogen allows both to reduce the band gap for reaching longer wavelengths and to compensate for the compressive strain of the InGaAs. Yet the growth parameters of 1.55 µm dilute nitride QWs should be carefully chosen in order to obtain material quality suitable for device operation 3,4 . The use of antimony as an incorporating surfactant improves the optical quality of the QWs, widens the usable growth parameter window and also decreases the band gap for emission at longer wavelengths 5,6 .…”

Section: Introductionmentioning

confidence: 99%

Monolithic GaInNAsSb/GaAs VECSEL emitting at 1550 nm

et al. 2015

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We report the first monolithic GaAs-based vertical external-cavity surface-emitting laser (VECSEL) operating at 1550 nm. The VECSEL is based on a gain mirror which was grown by plasma-assisted molecular beam epitaxy and comprises 8 GaInNAsSb/GaAs quantum wells and an AlAs/GaAs distributed Bragg reflector. When pumped by an 808 nm diode laser, the laser exhibited an output power of 80 mW for a mount temperature of 16 °C.

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Influence of arsenic flux on the annealing properties of GaInNAs quantum wells for long wavelength laser applications around 1.6μm

Cited by 9 publications

References 15 publications

Charge separation and temperature-induced carrier migration in Ga1−xInxN
Nuytten
¹
,
Hayne
²
,
Bansal
³

et al. 2011
Phys. Rev. B

Charge separation and temperature-induced carrier migration in Ga1−xInxN
Nuytten
¹
,
Hayne
²
,
Bansal
³

et al. 2011
Phys. Rev. B

Inhomogeneous GaInNAs quantum wells: their properties and utilization for improving of p-i-n and p-n junction photodetectors

Monolithic GaInNAsSb/GaAs VECSEL emitting at 1550 nm

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Influence of arsenic flux on the annealing properties of GaInNAs quantum wells for long wavelength laser applications around 1.6μm

Cited by 9 publications

References 15 publications

Charge separation and temperature-induced carrier migration in Ga1−xInxNNuytten1, Hayne2, Bansal3 et al. 2011Phys. Rev. B

Charge separation and temperature-induced carrier migration in Ga1−xInxNNuytten1, Hayne2, Bansal3 et al. 2011Phys. Rev. B

Inhomogeneous GaInNAs quantum wells: their properties and utilization for improving of p-i-n and p-n junction photodetectors

Monolithic GaInNAsSb/GaAs VECSEL emitting at 1550 nm

Contact Info

Product

Resources

About

Charge separation and temperature-induced carrier migration in Ga1−xInxN
Nuytten
¹
,
Hayne
²
,
Bansal
³

et al. 2011
Phys. Rev. B

Charge separation and temperature-induced carrier migration in Ga1−xInxN
Nuytten
¹
,
Hayne
²
,
Bansal
³

et al. 2011
Phys. Rev. B