Influence of B/N co-doping on electrical and photoluminescence properties of CVD grown homoepitaxial diamond films

Abstract

Boron doped diamond (BDD) has great potential in electrical, and electrochemical sensing applications. The growth parameters, substrates, and synthesis method play a vital role in the preparation of semiconducting BDD to metallic BDD. Doping of other elements along with boron (B) into diamond demonstrated improved efficacy of B doping and exceptional properties. In the present study, B and nitrogen (N) co-doped diamond has been synthesized on single crystalline diamond (SCD) IIa and SCD Ib substrates in a microwave plasma-assisted chemical vapor deposition process. The B/N co-doping into CVD diamond has been conducted at constant N flow of N/C ~ 0.02 with three different B/C doping concentrations of B/C ~ 2500 ppm, 5000 ppm, 7500 ppm. AFM topography depicted the flat and smooth surface with low surface roughness for low B doping, whereas surface features like hillock structures and un-epitaxial diamond crystals with high surface roughness were observed for high B doping concentrations. KPFM measurements revealed that the work function (4.74 eV to 4.94 eV) has not varied significantly for CVD diamond synthesized with different B/C concentrations. Raman spectroscopy measurements described the growth of high-quality diamond and photoluminescence studies revealed the formation of high-density nitrogen-vacancy centers in CVD diamond layers. X-ray photoelectron spectroscopy results confirmed the successful B doping and the increase in N doping with B doping concentration. The room temperature electrical resistance measurements of CVD diamond layers (B/C ~ 7500 ppm) have shown the low resistance value ~ 9.29 Ω for CVD diamond/SCD IIa, and the resistance value ~ 16.55 Ω for CVD diamond/SCD Ib samples.

Electrocatalytic performance of oxygen-activated carbon fibre felt anodes mediating degradation mechanism of acetaminophen in aqueous environments

“…The presence of C-O species on the pristine CFE is due to surface contamination and partial oxidation in the air atmosphere. These results agree with the literature findings (Sobaszek et al, 2016;Kunuku et al, 2022). The oxidised to non-oxidised carbon share, C ox = 0.40 for pristine CFE, is based on C 1s spectral deconvolution.…”

Effect of oxygen on regulation of properties of moderately boron-doped diamond films

“…The co-doping of boron and oxygen has been widely investigated by many groups. [13][14][15] For example, Issaoui et al [16] have studied the effect of oxygen on the heavily boron-doped diamond and shown that the obtained films exhibit high crystalline quality with adding a large amount of oxygen in gas phase. However, most of the prior literature focuses on the effect of oxygen on the properties (such as crystalline quality, [17,18] growth rate, [18,19] and electrical property [17,19] ) in heavily boron-doped diamond.…”