The microwave dielectric properties of ZnO-B 2 O 3 -SiO 2 (ZBS)-doped La(Mg 0.5 Sn 0.5 )O 3 ceramics were investigated with a view to their application in microwave devices. ZBS -doped La(Mg 0.5 Sn 0.5 )O 3 ceramics were prepared by the conventional solid-state method. The X-ray diffraction patterns of ZBS-doped La(Mg 0.5 Sn 0.5 )O 3 ceramics exhibited no significant variation of phase with sintering temperature. By adding 2.0 wt% ZBS, a dielectric constant of 19.14, a quality factor (Q 9 f) of 35,800 GHz, and a temperature coefficient of resonant frequency s f (-86 ppm/°C) were obtained when La(Mg 0.5 Sn 0.5 )O 3 ceramics were sintered at 1,400°C for 4 h.