Influence of band structure on electron ballistic transport in silicon nanowire MOSFET’s: An atomistic study

Nehari, K.; Cavassilas, Nicolas; Autran, Jean‐Luc; Bescond, Marc; Munteanu, Daniéla; Lannoo, M.

doi:10.1016/j.sse.2006.03.041

Cited by 107 publications

(72 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As a caveat, the effective masses do not scale with the device sizes in our simulations. This may be an issue for severe confinement regimes, as shown in [26], and deserve further investigations by means of first-principles simulations. In this work, the following three carrier mobility models have been used; Masetti concentration dependent mobility model, The Lombardi perpendicular field dependent model, and Caughey-Thomas, field dependent mobility model.…”

Section: Simulation Methodologymentioning

confidence: 94%

Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit

Al-Ameri

Georgiev

Sadi

et al. 2017

Solid-State Electronics

View full text Add to dashboard Cite

Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit. Solid-State Electronics, 129, pp. 73-80. (doi:10.1016/j.sse.2016 This is the author's final accepted version.There may be differences between this version and the published version. You are advised to consult the publisher's version if you wish to cite from it.http://eprints.gla.ac.uk/133442/ Deposited on: 04 January 2017 Enlighten -Research publications by members of the University of Glasgow http://eprints.gla.ac.uk 1  Abstract-In this work we investigate the impact of quantum mechanical effects on the device performance of n-type silicon nanowire transistors (NWT) for possible future CMOS applications at the scaling limit. For the purpose of this paper, we created Si NWTs with two channel crystallographic orientations <110> and <100> and six different cross-section profiles. In the first part, we study the impact of quantum corrections on the gate capacitance and mobile charge in the channel. The mobile charge to gate capacitance ratio, which is an indicator of the intrinsic performance of the NWTs, is also investigated. The influence of the rotating of the NWTs cross-sectional geometry by 90 o on charge distribution in the channel is also studied. We compare the correlation between the charge profile in the channel and cross-sectional dimension for circular transistor with four different cross-sections diameters: 5nm, 6nm, 7nm and 8nm. In the second part of this paper, we expand the computational study by including different gate lengths for some of the Si NWTs. As a result, we establish a correlation between the mobile charge distribution in the channel and the gate capacitance, drain-induced barrier lowering (DIBL) and the subthreshold slope (SS). All calculations are based on a quantum mechanical description of the mobile charge distribution in the channel. This description is based on the solution of the Schrödinger equation in NWT cross sections along the current path, which is mandatory for nanowires with such ultra-scale dimensions.

show abstract

Section: Simulation Methodologymentioning

confidence: 94%

Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit

Al-Ameri

Georgiev

Sadi

et al. 2017

Solid-State Electronics

View full text Add to dashboard Cite

show abstract

“…It is important to point out that the effective masses do not scale with the device size in our calculations. This might be not sufficient for devices with severe charge confinement [10]. Further investigation is required and it is currently being undertaken.…”

Section: Methodsmentioning

confidence: 99%

Interplay between quantum mechanical effects and a discrete trap position in ultra-scaled FinFETs

Georgiev

Amoroso

Gerrer

et al. 2015

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

View full text Add to dashboard Cite

“…Calculation of band structures in Si and Ge nanowires using tight-binding simulations has shown that for devices with a cross-section larger than 4 nm, the change in curvature of electronic bands along transport directions is negligible, and as a result the parabolic approximation is valid and accurate. 20,23 Here, the quantum transport is calculated using the non-equilibrium Green's functions (NEGF) formalism 24 expressed in the mode space (MS) approach. 25 26 is used to solve the Poisson equation and obtain the electrostatic potential in the device.…”

Section: Simulation Methodologymentioning

confidence: 99%

Influence of channel material properties on performance of nanowire transistors

Razavi

Fagas

Ferain

et al. 2012

Journal of Applied Physics

View full text Add to dashboard Cite

Access to the full text of the published version may require a subscription. The performance of germanium and silicon inversion-mode and junctionless nanowire field-effect transistors are investigated using three-dimensional quantum mechanical simulations in the ballistic transport regime and within the framework of effective-mass theory for different channel materials and orientations. Our study shows that junctionless nanowire transistors made using n-type Ge or Si nanowires as a channel material are more immune to short-channel effects than conventional inversion-mode nanowire field-effect transistors. As a result, these transistors present smaller subthreshold swing, less drain-induced barrier-lowering, lower source-to-drain tunneling, and higher I on /I off ratio for the same technology node and low standby power technologies. We also show that the short-channel characteristics of Ge and Si junctionless nanowire transistors, unlike the inversion-mode nanowire transistors, are very similar. The results are explained through a detailed analysis on the effect of the channel crystallographic orientation, effective masses, and dielectric constant on electrical characteristics. V C 2012 American Institute of Physics. Rights

show abstract

Influence of band structure on electron ballistic transport in silicon nanowire MOSFET’s: An atomistic study

Cited by 107 publications

References 4 publications

Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit

Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit

Interplay between quantum mechanical effects and a discrete trap position in ultra-scaled FinFETs

Influence of channel material properties on performance of nanowire transistors

Contact Info

Product

Resources

About