Influence of Biaxial Strain and Interfacial Layer Growth on Ferroelectric Wake-Up and Phase Transition Fields in ZrO<sub>2</sub>

Xu, Bohan; Ganser, Richard; Holsgrove, Kristina M.; Wang, Xuetao; Vishnumurthy, Pramoda; Mikolajick, Thomas; Schroeder, Uwe; Kersch, Alfred; Lomenzo, Patrick D.

doi:10.1021/acsami.4c06143

ACS Appl. Mater. Interfaces

2024

DOI: 10.1021/acsami.4c06143

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Influence of Biaxial Strain and Interfacial Layer Growth on Ferroelectric Wake-Up and Phase Transition Fields in ZrO₂

Bohan Xu,

Richard Ganser,

Kristina M. Holsgrove

et al.

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2024

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Cited by 2 publications

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Impact of Hafnium Doping on Phase Transition, Interface, and Reliability Properties of Zr_xHf_1–xO₂-Based Capacitors

Vishnumurthy,

Xu,

Wunderwald

et al. 2024

ACS Appl. Electron. Mater.

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Zirconium oxide and zirconium-rich Zr x Hf 1−x O 2 thin films have attracted attention owing to their switching stability and significant promise for commercial applications such as high-performance, nonvolatile memory devices, high-density energy storage devices, and supercapacitors. In the path toward commercial applications, understanding the factors influencing the formation of ferroelectric properties in these films is essential. This study explores the impact of hafnium doping on various factors affecting the formation of the ferroelectric phase in zirconium-rich hafnium oxide thin films. This work highlights that hafnium doping in zirconium oxide monotonically lowers the energy barrier for the antiferroelectric to ferroelectric phase transition. At the same time, it reduces the thickness of the parasitic layers formed at the metal nitride electrode-dielectric interfaces. Furthermore, it is demonstrated that the hafnium doping decreases the leakage current density, thus providing insights into lowering the defect density in zirconium-rich hafnium oxide films.

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Impact of Hafnium Doping on Phase Transition, Interface, and Reliability Properties of Zr_xHf_1–xO₂-Based Capacitors

Vishnumurthy,

Xu,

Wunderwald

et al. 2024

ACS Appl. Electron. Mater.

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Hybrid improper ferroelectricity in a Si-compatible CeO2/HfO2 artificial superlattice

Kumar,

Lee

2024

npj Comput Mater

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Influence of Biaxial Strain and Interfacial Layer Growth on Ferroelectric Wake-Up and Phase Transition Fields in ZrO₂

Cited by 2 publications

References 68 publications

Impact of Hafnium Doping on Phase Transition, Interface, and Reliability Properties of Zr_xHf_1–xO₂-Based Capacitors

Impact of Hafnium Doping on Phase Transition, Interface, and Reliability Properties of Zr_xHf_1–xO₂-Based Capacitors

Hybrid improper ferroelectricity in a Si-compatible CeO2/HfO2 artificial superlattice

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Influence of Biaxial Strain and Interfacial Layer Growth on Ferroelectric Wake-Up and Phase Transition Fields in ZrO2

Cited by 2 publications

References 68 publications

Impact of Hafnium Doping on Phase Transition, Interface, and Reliability Properties of ZrxHf1–xO2-Based Capacitors

Impact of Hafnium Doping on Phase Transition, Interface, and Reliability Properties of ZrxHf1–xO2-Based Capacitors

Hybrid improper ferroelectricity in a Si-compatible CeO2/HfO2 artificial superlattice

Contact Info

Product

Resources

About

Influence of Biaxial Strain and Interfacial Layer Growth on Ferroelectric Wake-Up and Phase Transition Fields in ZrO₂

Impact of Hafnium Doping on Phase Transition, Interface, and Reliability Properties of Zr_xHf_1–xO₂-Based Capacitors

Impact of Hafnium Doping on Phase Transition, Interface, and Reliability Properties of Zr_xHf_1–xO₂-Based Capacitors