Influence of Bond Energies of Oxides on the Kinetics of Anodic Oxide Growth on Valve Metals

Abstract

Average bond energy values have been calculated for the oxides of Bi, V, U, Y, Nb, Zr, Ti, W, Ta, AI, Hf, and Si from the appropriate thermochemical data. An attempt has been made to explore the influence of these bond energies on the magnitude of kinetic parameters for the anodic oxide growth on the corresponding metals. It has been concluded that, in general, with increasing bond energy, the field required for sustaining a given ionic current density tends to increase, as also does the "Tafel slope." Further, the magnitude of the "activation dipole" in Dignam's theory, both for the steady-state and the transient kinetics, tends to decrease with increase in bond energy.

Sputter deposited nanocrystalline Ni and Ni-W films as catalysts for hydrogen evolution

“…This point to the fact that at the E OCP each of Ni-W electrodes is covered by a thin spontaneously formed oxide film [13], so called "natural" oxide which protect metal (alloy) against further dissolution (corrosion). During the cathodic polarization some of the "natural" oxide films formed on the surface of transition metals can be completely reduced [14,15], but the present results do not give sufficient information about that.…”

Diffusion of oxygen in amorphous Al2O3, Ta2O5, and Nb2O5

“…Figure 9 For the amorphous oxides, Q and D 0 are plotted against the binding energy between metal and oxygen ions, 36 as shown in Fig. 9(b).…”

Healing Effect of Controlled Anti‐Electromigration on Conventional and High‐Tc Superconducting Nanowires

“…Considering that a strong directional bond between Nb and O gives rise to large binding energies above 5 eV 43,44 it would be interesting to verify our hypothesis in an alternative system where O atoms were more susceptible to be displaced by an electron current. To that end, in the next section we focus our attention on a copper oxide superconducting compound.…”