Influence of boron doping on roughness microcrystalline silicon

Toyama, Toshihiko; Yoshida, Wataru; Sobajima, Yasushi; Okamoto, H.

doi:10.1016/j.jnoncrysol.2007.10.052

Cited by 18 publications

(5 citation statements)

References 19 publications

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“…Recently, boron-doped microcrystalline silicon and microcrystalline Si-based alloys have attracted a great deal of attention due to their potential application as a window layer of microcrystalline silicon-based p-i-n junction solar cells [1][2][3][4][5][6][7]. Compared to B-doped amorphous Si, this material has a higher dark conductivity, carrier mobility, doping efficiency, optical transparency, etc., due to the presence of Si crystallites embedded in the amorphous Si or Si-based matrices [8][9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Inductively coupled plasma-assisted RF magnetron sputtering deposition of boron-doped microcrystalline Si films

Huang

Cheng

et al. 2010

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 99%

“…[1,[15][16][17]. However, to the best of our knowledge, the most commonly used boron sources are toxic.…”

Section: Introductionmentioning

confidence: 99%

Inductively coupled plasma-assisted RF magnetron sputtering deposition of boron-doped microcrystalline Si films

Huang

Cheng

et al. 2010

Journal of Alloys and Compounds

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“…Indeed, a lower grain size implies a higher volume proportion of the disordered region between grains, and therefore a lower crystalline fraction. On the other hand, the further increase of the crystalline fraction with boron content observed in Figure may be due to an increase of the crystalline quality caused by the presence of boron acting as nucleation centers . Since we do not observe a variation of the grain size with boron concentration, the effect of boron as an inductor of crystallization prevails, and therefore the crystalline fraction increases.…”

Section: Resultsmentioning

confidence: 63%

“…This means that the addition of boron increases the nucleation rate. Depositing boron‐doped μc‐Si films by plasma‐enhanced (PE)CVD from silane and diborane, Toyama et al reached a similar conclusion. A typical SEM front view of one of the samples can be seen in Figure a.…”

Section: Resultsmentioning

confidence: 81%

Doped Polycrystalline Silicon Thin Films Deposited on Glass from Trichlorosilane**

Benvenuto

Buitrago‐Sierra

Schmidt

2015

Chemical Vapor Deposition

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Atmospheric pressure (AP) thermal CVD is used to deposit thin poly-Si films on glass substrates. Also produced are heterojunction solar cells carrying out the deposition on c-Si wafers. A batch-type hot-wall reactor, employing SiHCl 3 as a precursor, H 2 as a carrier and reaction gas, BBr 3 as a p-type doping agent, and PCl 3 as a n-type doping agent, is used. The films obtained are homogeneous and well-adhered to the substrate. Samples are structurally characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), reflectance spectroscopy in the UV-vis region, X-ray diffraction (XRD), and Raman spectroscopy (RS). The electrical characterization includes conductivity measurements as a function of temperature, and Hall effect measurements. For the p-doped samples, XRD reveals a strong (220) preferential orientation of the films, while the n-doped samples lack columnar structure or preferential orientation. RS and UV-reflectance confirm a high crystalline fraction. Dark conductivity measurements as a function of temperature show that the films can be grown intrinsic, p-type or n-type. Activation energies between 0.61 and $0 eV are obtained, with reasonable values for the carrier mobilities. For the solar cells, relatively high values of V OC ($507 mV) and J SC ($29.6 mA cm À2 ) are measured. In conclusion, these results demonstrate the feasibility of directly depositing doped poly-Si thin films on glass and c-Si substrates at intermediate temperatures, with interesting characteristics for photovoltaic applications.

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“…The surface roughness (S r ) increased from 3.3 nm to 4.7 nm, indicating that the grain size increased. 31 At higher hydrogen dilution (low SC), a large number of hydrogen atoms break weak Si Si bonds changing to strong ones, by selective etching at the surface causing microcrystallization. Moreover, the coverage of the growing film's surface by atomic hydrogen increases the surface diffusion coefficient of the radicals, which helps to decrease the structural disorder (micro void fraction), and also the film growth rate (from 5.7 nm/min to 2.9 nm/min).…”

Section: Effect Of the Silane Concentration On P-type C-si:h Thin Filmsmentioning

confidence: 99%

A Novel Method to Make Boron-Doped Microcrystalline Silicon Thin Films with Optimal Crystalline Volume Fraction for Thin Films Solar Cell Applications

Shin¹,

Park²,

Kim³

et al. 2014

j nanosci nanotechnol

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Highly conducting boron-doped microcrystalline silicon (p-type μc-Si:H) thin films have been prepared by radio frequency plasma-enhanced chemical-vapor deposition (RF-PECVD). In this work, the effects of hydrogen dilution, doping ratio, plasma power, deposition pressure and substrate temperature on the growth and the properties of boron-doped microcrystalline silicon (p-type μc-Si:H) thin films are investigated. The electrical, chemical and structural properties are improved with increasing crystallite, which depends on the plasma conditions. For various plasma parameters, the crystalline volume fraction (X(c)), dark conductivity (σ(d)), activation energy (E(a)), hydrogen content (C(H)), surface roughness (S(r)), and micro void fraction (R*) were measured, and they were 0-72%, 4.17-10(-4) S/cm-1.1 S/cm, 0.041-0.113 eV, 3.8-11.5 at.%, 3.2 nm-12.2 nm, and 0.47-0.80, respectively. The film with R* of 0.47 and C(H) of about 5 at.% belonged to a region of low disorder, and acted as a good passivation layer.

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Influence of boron doping on roughness microcrystalline silicon

Cited by 18 publications

References 19 publications

Inductively coupled plasma-assisted RF magnetron sputtering deposition of boron-doped microcrystalline Si films

Inductively coupled plasma-assisted RF magnetron sputtering deposition of boron-doped microcrystalline Si films

Doped Polycrystalline Silicon Thin Films Deposited on Glass from Trichlorosilane**

A Novel Method to Make Boron-Doped Microcrystalline Silicon Thin Films with Optimal Crystalline Volume Fraction for Thin Films Solar Cell Applications

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