Influence of calcination and sintering temperatures on dielectric and magnetic properties of Pb(Fe0.5Nb0.5)O3 ceramics synthesized by the solid state method

Bartek, Nicole; Shvartsman, Vladimir V.; Salamon, Soma; Wende, Heiko

doi:10.1016/j.ceramint.2021.05.055

Cited by 8 publications

(2 citation statements)

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“…Since four peaks are visible, the PFN film must have a fourfold rotation symmetry, which is either tetragonal, or cubic. Bulk PFN has a monoclinic structure [27]; however, mechanical misfit stress may stabilize another structure in epitaxial thin films. Yan et al [33] investigated the structure of PFN deposited on cubic STO (001) and found that due to the lattice mismatch, the a and b parameter of the unit cell are equally compressed, and the c parameter is expanded, resulting in a tetragonal structure.…”

Section: Resultsmentioning

confidence: 99%

“…Interestingly, another well-known multiferroic, namely lead iron niobate (PbFe 0.5 Nb 0.5 O 3 , PFN), has remained out of sight of the photovoltaic community. Ferroelectric, magnetic, and magnetoelectric properties of PFN were studied in detail [24][25][26][27]. The material has a ferroelectric-paraelectric phase transition in the range of 370-390 K [28] and undergoes a transition into the antiferromagnetic state at 143 K [29].…”

Section: Introductionmentioning

confidence: 99%

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Band Gap of Pb(Fe0.5Nb0.5)O3 Thin Films Prepared by Pulsed Laser Deposition

et al. 2021

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Ferroelectric materials have gained high interest for photovoltaic applications due to their open-circuit voltage not being limited to the band gap of the material. In the past, different lead-based ferroelectric perovskite thin films such as Pb(Zr,Ti)O3 (Pb,La)(Zr,Ti)O3 and PbTiO3 were investigated with respect to their photovoltaic efficiency. Nevertheless, due to their high band gaps they only absorb photons in the UV spectral range. The well-known ferroelectric PbFe0.5Nb0.5O3 (PFN), which is in a structure similar to the other three, has not been considered as a possible candidate until now. We found that the band gap of PFN is around 2.75 eV and that the conductivity can be increased from 23 S/µm to 35 S/µm during illumination. The relatively low band gap value makes PFN a promising candidate as an absorber material.

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Section: Resultsmentioning

confidence: 99%