Influence of Carbon on pBTI Degradation in GaN-on-Si E-Mode MOSc-HEMT

Viey, A. G.; Vandendaele, W.; Jaud, Marie-Anne; Gerrer, Louis; Garros, X.; Cluzel, J.; Martin, Simon J.; Krakovinsky, A.; Biscarrat, J.; Gwoziecki, R.; Plissonnier, M.; Gaillard, F.; Modica, R.; Iucolano, Ferdinando; Meneghini, Matteo; Meneghesso, Gaudenzio; Ghibaudo, G.

doi:10.1109/ted.2021.3050127

Cited by 9 publications

(3 citation statements)

References 38 publications

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“…Both bulk and interface dielectric traps affect the device performance through VT, by inducing instabilities on this crucial parameter [439]. These effects will be described in more detail in Section 8.7.3.…”

Section: Gate-dielectric Trapsmentioning

confidence: 99%

GaN-based power devices: Physics, reliability, and perspectives

Meneghini

Santi

Abid

et al. 2021

Journal of Applied Physics

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342

126

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Over the last decade, gallium nitride has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available on the market, GaN has the widest energy gap, the largest critical field, the highest saturation velocity, thus representing an excellent material for the fabrication of high speed/high voltage components.The presence of spontaneous and piezoelectric polarization allows to create a 2-dimensional electron gas, with high mobility and large channel density, in absence of any doping, thanks to the use of AlGaN/GaN heterostructures. This contributes to minimize resistive losses; at the same time, for GaN transistors switching losses are very low, thanks to the small parasitic capacitances and switching charges. Device scaling and monolithic integration enable high frequency operation, with consequent advantages in terms of miniaturization.For high power/high voltage operation, vertical device architectures are being proposed and investigated, and 3-dimensional structuresfin-shaped, trench-structured, nanowire-basedare demonstrating a great potential. Contrary to silicon, GaN is a relatively young material: trapping and degradation processes must be understood and described in detail, with the aim of optimizing device stability and reliability. This tutorial paper describes the physics, technology and reliability of GaN-based power devices: in the first part of the article, starting from a discussion of the main properties of the material, the characteristics of lateral and vertical GaN transistors are discussed in detail, to provide guidance in this complex and interesting field. The second part of the paper focuses on trapping and reliability aspects: the physical origin of traps in GaN, and the main degradation mechanisms are discussed in detail. The wide set of referenced papers and the insight on the most relevant aspects gives the reader a comprehensive overview on present and next-generation GaN electronics. IntroductionOver the past decade, gallium nitride has emerged as an excellent material for the fabrication of power semiconductor devices. Thanks to the unique properties of GaN, diodes and transistors based on this material have excellent performance, compared to their silicon counterparts, and are expected to find wide application in the next-generation power converters. Owing to the flexibility and the energy efficiency of GaN-based power converters, the interest towards this technology is rapidly growing: the aim of this tutorial is to review the most relevant physical properties, the operating principles, the fabrication parameters, and the stability/reliability issues of GaN-based power transistors. For introductory purposes, we start summarizing the physical reasons why GaN transistors achieve a much better performance than the corresponding silicon devices, to help the reader understanding the unique advantages of this technology.The properties of GaN devices allow the fabrication of high-efficiency (near or above 99 %)...

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Section: Gate-dielectric Trapsmentioning

confidence: 99%

GaN-based power devices: Physics, reliability, and perspectives

Meneghini

Santi

Abid

et al. 2021

Journal of Applied Physics

Self Cite

342

126

View full text Add to dashboard Cite

show abstract

“…wide bandgap (3.4 eV), high critical breakdown electric field (3.3 MV cm −1 ), and high electron drift velocity (2.7 × 10 7 cm s −1 )] [ [1][2][3], gallium nitride (GaN) semiconductors have demonstrated great potential for next-generation power electronic devices. Benefiting from the high mobility (∼2000 cm 2 (V-s) −1 ) and high density of two-dimensional electron gas (2-DEG) formed in AlGaN/GaN heterojunctions, high electron mobility transistors (HEMTs) are suitable for applications in consumer electronics markets, such as mobile power systems and hybrid electric vehicles [4][5][6]. Due to reliability and safety concerns, single-chip enhancement-mode (E-mode) HEMTs are desirable to develop GaN-based product markets.…”

Section: Introductionmentioning

confidence: 99%

Performance improvement of enhancement-mode GaN-based HEMT power devices by employing a vertical gate structure and composite interlayers*

Sun,

Dai,

Huang

et al. 2024

Semicond. Sci. Technol.

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In this work, the p-n junction vertical gate (JVG) and polarization junction vertical gate (PVG) structures are for the first time proposed to improve the performances of GaN-based enhancement-mode (E-mode) HEMT devices. Compared with the control group featuring the vertical gate structure, highly improved threshold voltage (Vth) and breakdown voltage (BV) are achieved with the assistance of the extended depletion regions formed by inserting single or composite interlayers. The structure dimensions and physical parameters for device interlayers are optimized by TCAD simulation to adjust the spatial electric field distribution and hence improve the device off-state characteristics. The optimal JVG-HEMT device can reach a Vth of 3.4 V, a low on-state resistance (Ron) of 0.64 mΩ·cm2, and a BV of 1245 V, while the PVG-HEMT device exhibits a Vth of 3.7 V, a Ron of 0.65 mΩ·cm2, and a BV of 1184 V, which could be further boosted when additional field plate design is employed. Thus, the figure-of-merit value of JVG- and PVG-HEMT devices rise to 2.4 and 2.2 GW/cm2, respectively, much higher than that for VG-HEMT control group (1.0 GW/cm2). The work provides a novel technical approach to realize higher-performance E-mode HEMTs.

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“…[7] The commonly studied dielectrics are SiO 2 , [8] SiN x , [9][10][11] and Al 2 O 3 , [9,12,13] but the latter stands out thanks to its high permittivity (≈8 to 10) and high band gap (≈7 eV). However, the Al 2 O 3 /etched GaN gate stack suffers from V TH instability due to Al 2 O 3 native defects [14,15] and deteriorated interface from the necessary AlGaN barrier etching, consequently jeopardizing the implementation of MOSc-HEMTs. In order to optimize the dielectric/etched GaN gate stack, different solutions before the dielectric deposition can be implemented, ranging from surface preparation to interfacial layers.…”

Section: Introductionmentioning

confidence: 99%

Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors

Rocha,

Zeghouane,

Boubenia

et al. 2023

Adv Elect Materials

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Electrical and material properties of plasma‐enhanced atomic layer deposited (PE‐ALD) AlON on dry‐etched n‐type GaN substrates are investigated for nitrogen concentration ranging from 1.5% to 7.1%. Firstly, an increase in flat‐band voltage (VFB) and its hysteresis with increasing nitrogen concentration is reported. The increase in VFB is associated with the nitrogen content whereas the increase in hysteresis to the presence of impurities (hydroxyl groups and carbon‐related impurities). Alongside the nitrogen concentration, the impact of different post‐deposition annealing (PDA) temperatures is studied (400–800 °C). Stable AlON layers and interfaces with etched GaN substrates are reported with slight gallium oxide growth or gallium diffusion towards the dielectric layer. Finally, with increasing PDA temperature, an increase in VFB and a significant reduction of both VFB hysteresis and interface state density (Dit) are observed, notably at the measuring temperature of 150 °C. These results present a promising pathway toward more reliable and stable normally‐OFF GaN‐based MOS‐channel high electron mobility transistors (MOSc‐HEMTs).

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Influence of Carbon on pBTI Degradation in GaN-on-Si E-Mode MOSc-HEMT

Cited by 9 publications

References 38 publications

GaN-based power devices: Physics, reliability, and perspectives

GaN-based power devices: Physics, reliability, and perspectives

Performance improvement of enhancement-mode GaN-based HEMT power devices by employing a vertical gate structure and composite interlayers*

Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors

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