Influence of Carrier Lifetime, Transit Time, and Operation Voltages on the Photoresponse of Visible-Blind AlGaN Metal–Semiconductor–Metal Photodetectors

Schlegel, Jessica; Brendel, Moritz; Martens, Martin; Knigge, Andrea; Raß, Jens; Einfeldt, S.; Brunner, F.; Weyers, M.; Kneissl, Michael

doi:10.7567/jjap.52.08jf01

Cited by 9 publications

(3 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To study the photo-response dynamics in layer-edge surface devices, we measured the time-dependent photo current of 2D perovskites ( n = 1, 2, 3) and 3D perovskites. The timescales of photo-response dynamics measurement are quite larger than the carrier of lifetime in regular time-resolved photoluminescence measurement, since the external electric field will dissemble the electron–hole pairs in the excitons, and effectively extend the carrier lifetime 25 . The response time τ is defined by the duration of photo current changing from 10 to 90% of the maximum and vice versa.…”

Section: Resultsmentioning

confidence: 99%

Layer-edge device of two-dimensional hybrid perovskites

Cheng

Wei

et al. 2018

Nat Commun

View full text Add to dashboard Cite

Two dimensional layered organic-inorganic hybrid perovskites (2D perovskites) are potential candidates for next generation photovoltaic device. Especially, the out-of-plane surface perpendicular to the superlattice plane of 2D perovskites (layer-edge surface) has presented several exotic behaviors, such as layer-edge states which are found to be crucial for improving the efficiency of 2D perovskite solar cells. However, fundamental research on transport properties of layer-edge surface is still absent. In this report, we observe the electronic and opto-electronic behavior in layer-edge device of 2D perovskites. The dark and photo currents are demonstrated to strongly depend on the crystallographic orientation in layer-edge device, and such anisotropic properties, together with photo response, are related to the thickness of inorganic layers. Finally, due to the abundant hydroxyl groups, water molecules are easy to condense on the layer-edge surface, and the conductance is extremely sensitive to the humidity environment, indicating a potential application of humidity sensor.

show abstract

Section: Resultsmentioning

confidence: 99%

Layer-edge device of two-dimensional hybrid perovskites

Cheng

Wei

et al. 2018

Nat Commun

View full text Add to dashboard Cite

show abstract

“…The optical intensity I opt has been fixed for all wavelengths to a value of 1 mW cm −2 corresponding to the experimental situation at 300 nm wavelength. Carrier recombination lifetimes of

τ_{normaln} = 1 n s

and

τ_{normalp} = 30 p s

as well as mobility values of

μ_{normaln} = 200 {c m}^{2} {normalV}^{- 1} s^{- 1}

and

μ_{normalp} = 5 {c m}^{2} {normalV}^{- 1} s^{- 1}

have been assumed . The ionized donor concentration N D was initially set to 3 × 10 16 cm −3 for any layer in the structure.…”

Section: Simulation Procedures For Algan Msm Pdsmentioning

confidence: 99%

Top‐ and bottom‐illumination of solar‐blind AlGaN metal–semiconductor–metal photodetectors

Brendel

Helbling

Knauer

et al. 2015

Physica Status Solidi (a)

Self Cite

View full text Add to dashboard Cite

The spectral performance of solar-blind Al x Ga 1-x N based metal-semiconductor-metal ultra-violet photodetectors has been measured for top-as well as bottom-illumination at different bias voltages. In the bottom-illumination case the external quantum efficiency spectra can be tuned between a peak or a broad wavelength spectrum by adjusting absorber layer thickness and applied bias voltage. For thin absorber layers the external quantum efficiency is enhanced by a factor of three, reaching 20% quantum efficiency at 20 V bias, compared to the front-illumination case. Results of twodimensional device simulations are well in agreement with the experimental findings. From these simulations it can be concluded, that the different spectral response for top-and bottom-illumination results from the different overlap of optical carrier generation by absorption and carrier transport by the electric field.Spectra of external quantum efficiency of solar-blind metalsemiconductor-metal photodetectors upon top-illumination (dashed) and bottom-illumination (continuous) at 1 V, 5 V, and 20 V bias voltage. The Al 0.5 Ga 0.5 N absorber layers of different thickness d Abs were grown on AlN/sapphire templates.

show abstract

“…At the end of 2015, the same group reported an EQE of up to 67% at 50 V in a bottom-illuminated 500 nm-thick Al 0.50 Ga 0.50 N absorber layer of an MSM-based PD [485] . Apart from the influence of absorbance layers, the effects of asymmetric electrodes on the EQE of bottom-illuminated Al 0.40 Ga 0.60 N-and Al 0.50 Ga 0.50 N-based MSM PDs have also been discussed [483,501] .…”

Section: Photodetectorsmentioning

confidence: 99%